• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.107-111
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• 2009

In this paper, the power added efficiency(PAE) of a Doherty amplifier has been improved by applying Photonic Bandgap(PBG) characteristics on the output of amplifier. As a result of the high order harmonics termination, excellent improvement in PAE, maximum output power as well as linearity is obtained. The PAE is improved as much as relatively 35% compared with a conventional Doherty amplifier. Moreover, size of LPF is reduced by PBG characteristics. Therefore the whole amplifier circuit size is considerably reduced by diminishing in size of the LPF as compared with a Doherty amplifier using conventional LPFs.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.1-6
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• 2008

In this paper, bias control circuit structure have been employed to improve the power added efficiency of the CMOS class-E power amplifier on low input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal. The proposed CMOS class-E power amplifier using bias controlled circuit has been improved the PAE on low output power level. The operating frequency is 2.14GHz and the output power is 22dBm to 25dBm. In addition to, it has been evident that the designed the structure has showed more than a 80% increase in PAE for flatness over all input power level, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.6
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• pp.435-443
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• 2017

In this study, we analyzed the effects of the common-gate transistor bias of a switching mode CMOS power amplifier. Although the most earier works occured on the transistor sizes of the cascode structure, we showed that the gate bias of the common-gate transistor also influences the overall efficiency of the power amplifier. To investigate the effect of the gate bias, we analyzed the DC power consumption according to the gate bias and hence the efficiency of the power amplifier. From the analyzed results, the optimized gate bias for the maximum efficiency is lower than the supply voltage of the power amplifier. We also found that an excessively low gate bias may degrade the output power and efficiency owing to the effects of the on-resistance of the cascode structure. To verify the analyzed results, we designed a 1.9 GHz switching mode power amplifier using $0.18{\mu}m$ RF CMOS technology. As predicted in the analysis, the maximum efficiency is obtained at 2.5 V, while the supply voltage of power amplifier is 3.3 V. The measured maximum efficiency is 31.5 % with an output power of 29.1 dBm. From the measureed results, we successfully verified the analysis.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.11
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• pp.5409-5415
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• 2012

Piezo ceramic actuator is used for various industrial products such as spray, dispenser, and valve control etc. Since the deflection of the piezo ceramic element depends on the applied voltage, it is required a power amplifier with high voltage supply for driving the piezo ceramic actuators. In this paper, we develop a simple H-bridge type power amplifier and a compact flyback type high voltage switching mode power supply for piezo ceramic actuators. It is easy to adjust the amount of energy input to piezo ceramic actuator by pulse-width-modulation with H-bridge type power amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.723-730
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• 2007

This paper shows how the ACLR of power amplifier can be reduced by using Anti-phase IMD linearization technique which generate anti-phase IMD in the driver stage compare to output stage's IMD. And design process proposed. From the experimental result of W-CDMA 4FA input signal, this amplifier has ACLR -55 dBc@5 MHz offset at 30 watts average power. Compare to optimum matching technique to get maximum power gain, this technique has been improved ACLR by 12 dBc. Also this amplifier meets 50 watts average output power amplifier specification in domestic market.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.109-120
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• 2005

In this paper, bit error rate (BER) characteristics, sensitivity and minimum allowable launching power are numerically investigated as a function of amplifier spacing that consisted of 1,200 km WDM systems with MSSI method. It is conformed that the sensitivity and minimum allowable launching power are gradually degraded as amplifier spacings are gradually expanded, but those are not largely affected by modulation format. The sensitivity of RZ transmission system is smaller than that of NRZ transmission system, but minimum allowable launching power of NRZ transmission system is smaller than that of RZ transmission system. And, it is confirmed that the best amplifier spacing in NRZ and RZ transmission system is less than 50 km, because the sensitivity and minimum allowable launching power are less affected by fiber dispersion, channel wavelength and pump light power.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.53-56
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• 2003

A linear power amplifier is particularly emphasized on the CDMA system using a linear modulation scheme, because IMD which cause adjacent channel interference and co channel Interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS frequency band. The implemented linearizer is applied to a 30dBm class. A power amplifier for simulation performance. Two-tone signals at 1850 MHz and 1851.23 MHz are injected into the main power amplifier. The main power amplifier with a 12.1dB gain and a P1dB of 30 dBm(two-tone) was utlized. The reduction of IMD is around 22dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.12-16
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• 2007

In this paper, The 3rd-IMD of class-F power amplifier is improved using CMRC structure in order to remove the parasitic End harmonic at the output load of class-F power amplifier. The total size is very small more than class-F power amplifier using PBG. (Photonicband Gap) structure during improved 3rd-IMD characteristic performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1407-1413
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• 2000

This paper presents a feedforward linear power amplifier (LPA) using error feedback technique to achieve low intermodulation distortions(IMD) of power amplifiers for base stations. Especially, the proposed linear power amplifier is applied to feedforward technique combined with error feedback technique, which has no loss of amplifier gain unlike typical feedback technique. The proposed LPA is designed by using HP ADS ver. 1.3, fabricated. When two-tone signals at 1850 MHz and 1851.25 MHz with -7 dBm/tone from synthesizers are injected into the main power amplifier with gain of 28 dB and P1dB of 1W, the proposed LPA could reduce more than 35 dB.