• Journal of Satellite, Information and Communications
• /
• v.11 no.1
• /
• pp.1-5
• /
• 2016

In this paper, High Power Pulsed Amplifier with wide-band characteristic is implemented for L-band Navigational Aid(NAVAID). Due to the characteristics of L-Band NAVAID, implemented SSPA is demanded characteristics of high RF power, high linearity and high efficiency. Therefore, in this paper, efficiency characteristic is improved by modified class F technique. And linearity characteristic is improved by balance structure using hybrid coupler, $2^{nd}$ & $3^{rd}$ harmonic trap and anti-phase technique using non-linear characteristics of drive amplifier. Implemented SSPA shows that bandwidth of 300MHz, RF Output power of 1.5KW and efficiency of 55%.

• Journal of the Optical Society of Korea
• /
• v.18 no.6
• /
• pp.657-662
• /
• 2014

We demonstrate a simulation of a parallel hybrid fiber amplifier in the C+L-band with a gain controlling technique. A variable optical coupler is used to control the input signal power for both EDFA and RFA branches. The gain spectra of the C+L-band are flattened by optimizing the coupling ratio of the input signal power. In order to enhance the pump conversion efficiency, the EDFA branch was pumped by the residual Raman pump power. A gain bandwidth of 60 nm from 1530 nm to 1590 nm is obtained with large input signal power less than -5 dBm. The gain variation is about 1.06 dB at a small input signal power of -30 dBm, and it is reduced to 0.77 dB at the large input signal power of -5 dBm. The experimental results show close agreement with the simulation results.

• ETRI Journal
• /
• v.27 no.2
• /
• pp.133-139
• /
• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.2
• /
• pp.80-85
• /
• 2010

In this paper, the efficiency of power amplifier has been maximized by the application of EER structure, and the linearity has been improved by using metamaterial structure. This paper has proposed a design of power amplifier in class-F to get the PAE, and to control dynamic power using envelope detector. CRLH structure gets high-linearity by removing harmonics arisen from the mismatching of matching circuit. The PAE and the 3rd order IMD have been improved 5.93 %, 12.83 dB compared with those of conventional Class-F amplifier, respectively.

• 전자공학회논문지 IE
• /
• v.47 no.4
• /
• pp.34-38
• /
• 2010

In this paper, we suggest DCU(Digital Control Unit) for performance improvement and stability security of base station power amplifier. The designed DCU controls electric power that is supplied to power amplifier. When the regular input is 10dBm, the regular output is measured 47.8dBm and the results are compared between the case of the applying and the non-applying the DCU. We got the result that PA system is very stable as DCU are very well operating in the boundary degradation of IMD by the over-power level input.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.1
• /
• pp.37-43
• /
• 2001

In this paper, we designed a linear power amplifier considering its delay characteristics fur wideband operation. The power amplifier has the gain of 37 dB and is designed in 3-stage typ with 1W output power. The error amplifier has the gain of 55 dB and is designed in 4-stage typ. And directional coupler and power divider are designed. Vector modulator is used to adjust magnitude and phase of signal. A linear power amplifier, that is assembled with each modules, is designed considering the delay characteristics for 2.11~2.2 GHz. Its C/I3 ratio has been improved by B5 dB for bandwidth of 30 MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.6 s.121
• /
• pp.584-590
• /
• 2007

In this paper, the efficiency of power amplifier has been maximized by the application of EER structure, and the linearity has been improved by using PBG structure. This paper has proposed a design of power amplifier in class-F to get the PAE, and to control dynamic power using envelope detector. PBG structure gets high-linearity by removing harmonics arisen from the mismatching of matching circuit. The PAE and the 3rd order IMD have been improved 34.64%, 6.65 dB compared with those of conventional Doherty amplifier, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.24 no.8B
• /
• pp.1464-1471
• /
• 1999

A wide-band high power amplifier to use for radiated electromagnetic field immunity testing of EMS(Electromagnetic Susceptibility) standards has to meet IEC1000-4-3 specification in the frequency bandwidth of 80MHz to 1000MHz. The power amplifier to be described in this paper consists of driving and power stages with wide-band matched circuits by estimated impedances. The mismatching protection circuit is inserted in it to prevent from damage of power device when the output port of power amplifier is opened or shorted by user's mistake. The characteristics of the power amplifier are obtained output power over 100watts, gain over 40dB and flatness of $\pm$0.3dB in the frequency range of 80 ~300MHz. The harmonics suppression characteristics is measured over 20dBc. This wide-band high power amplifier can be useful fur radiated electromagnetic field immunity testing of IEC 1000-4-3 standard.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.3
• /
• pp.376-379
• /
• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.92-95
• /
• 2016

In this paper, an UHF-band 1 kW solid-state pulsed power amplifier was designed and implemented for the thermoacoustic imaging(TAI) at 900 MHz. The designed power amplifier has a pulse width of $80{\mu}s$ and a duty cycle of 1 % for short-pulse operation. The overall amplifier was implemented by combining of 16 single-power amplifiers adopting MRFE6P9220HR3 LDMOSFET using wilkinson power dividers. The solid-state pulsed power amplifier shows 25 % drain efficiency with a gain of 76.2 dB when the output power is 60.2 dBm for a -16 dBm input power at center frequency.