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http://dx.doi.org/10.5515/KJKIEES.2014.25.3.376

Design of Dual-Band Power Amplifier for the RFID Frequency-Band  

Kim, Jae-Hyun (Department of Electronic Engineering, In-Ha University)
Hwang, Sun-Gook (Department of Electronic Engineering, In-Ha University)
Park, Hyo-Dal (Department of Electronic Engineering, In-Ha University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.25, no.3, 2014 , pp. 376-379 More about this Journal
Abstract
In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.
Keywords
Power Amplifier; RFID; Dual-Band; Multi-Band; Filter;
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