• 한국전기전자재료학회논문지
• /
• 제27권8호
• /
• pp.501-504
• /
• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.365-368
• /
• 2004

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

• Journal of Power Electronics
• /
• 제12권6호
• /
• pp.954-959
• /
• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• 센서학회지
• /
• 제9권3호
• /
• pp.213-223
• /
• 2000

원자력 관련시설이나 우주 공간, 방사선 치료 센터 등에서 발생되는 방사선량은 정확히 검출되어야 할 필요성이 있다. 본 논문에서는 상용 P채널 Power MOSFET(metal oxide field effect transistor)를 방사선 누적선량 모니터링 센서로 활용하기 위해 실시간 방사선량 검출 측정 시스템을 설계 제작하였고, 시스템의 성능을 분석하기 위하여 Co-60 $\gamma$선원을 갖춘 고준위 조사시설에서 조사한 후 출력특성의 변화를 분석하였다. 방사선 조사실험 결과 P채널 Power MOSFET은 조사된 누적 방사선량에 비례하여 문턱전압($V_T$)이 변화됨과 곡선 변화의 선형적 특성을 지님을 알 수 있었다. 이 선형 함수관계를 이용하여 저가의 상용 P채널 Power MOSFET를 사용한 방사선 총 누적선량을 모니터링하기 위한 센서로 사용할 수 있음을 확인하였다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2012년도 추계학술대회 논문집
• /
• pp.663-664
• /
• 2012

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 추계학술대회 논문집
• /
• pp.193-194
• /
• 2014

This paper compares physical characteristic of MOSFET based on Si and SiC to achieve high efficiency in converters using MOSFETs which are typical switching elements. Also, it compares a result to compare operating efficiency when DC/DC converter is switching with each element.

• 한국전기전자재료학회논문지
• /
• 제26권8호
• /
• pp.587-590
• /
• 2013

Release competition and development of eco-friendly vehicles have been conducted violently also automaker, it will be a high growth industry of the charger and battery, which is the driving source of the motor of an electric vehicle. Reduces the on-resistance power elements DC - DC converter for battery charger for electric vehicles, must minimize switching losses. Should have a low on-resistance power than existing products. Compare the Super Junction MOSFET and Planar MOSFET, As a result, super junction MOSFET improve on about 87.4% on-state voltage drop performance than planar MOSFET.

• 한국전기전자재료학회논문지
• /
• 제28권4호
• /
• pp.213-217
• /
• 2015

Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficiency, design is important considerations of a power MOSFET with high-voltage applications in consumer electronics. Meanwhile, it was proposed that the efficiency of a MOSFET can be enhanced by conducting JFET region double implant to reduce the On-resistance of the transistor. This paper reports the effects of JFET region double implant on the electrical properties and the decreasing On-resistance of the MOSFET. Experimental results show that the 1st JFET region implant diffuse can enhance the On-resistance by decreasing the ion concentration due to the surface and reduce the On-resistance by implanting the 2nd Phosphorus to the surface JFET region.

• 전기전자학회논문지
• /
• 제27권4호
• /
• pp.630-635
• /
• 2023

SiC는 고온, 고전압을 비롯한 악조건에서의 내성이 기존 산업분야의 대다수를 점유하고 있는 Silicon에 비해 우수하여 전력반도체 분야에서 Silicon의 위치를 대체하여 가고 있다. 본 논문은 전력 반도체 소자 중 하나인 4H-SiC Planar MOSFET에 알루미늄으로 Gate를 형성하여 다결정 Si 게이트와 대비, 파라미터 값들이 일관성을 갖도록 하였으며, SiC MOSFET의 채널 도핑 농도에 변화를 주어 문턱전압과 항복전압, IV 특성을 연구하였다.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 추계학술대회 논문집
• /
• pp.33-34
• /
• 2014

In this paper, the inverter switch losses of BLDC motor for three types of PWM method and power devices was analyzed. When BLDC motor is driven at low currents, inverter switch losses for MOSFET is low because MOSFET operates like resistance. But, inverter switch losses for IGBT is higher than MOSFET due to its large turn-off losses. For low power inverter with MOSFET, the power losses of unified PWM is lower than that of unipolar and bipolar PWM.