Journal of Sensor Science and Technology (센서학회지)
- Volume 9 Issue 3
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- Pages.213-223
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- 2000
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Development of Radiation Dosimeter on P Channel Power MOSFET for $\gamma$ -rays Real-Time Detection
$\gamma$ 선 실시간 검출을 위한 P채널 Power MOSFET 방사선 선량 시스템 개발
- Han, Sang-Hyun (Dept. of Information and Electronics, Graduate School, Konyang Univ.) ;
- Ji, Yong-Kun (Dept. of Information and Electronics, Graduate School, Konyang Univ.) ;
- Kwon, O-Sang (Dept. of R&D, Hanwool Robotics Corp.) ;
- Min, Hong-Ki (Dept. of Information and Communication, University of Inchon) ;
- Lee, Eung-Hyuk (Dept. of Electronics, Korea Polytechnic University)
- 한상현 (건양대학교 대학원 정보전자공학과) ;
- 지용근 (건양대학교 대학원 정보전자공학과) ;
- 권오상 ((주)한울로보틱스 개발실) ;
- 민홍기 (인천대학교 정보통신공학과) ;
- 이응혁 (한국산업기술대학교 전자공학과)
- Published : 2000.05.31
Abstract
It is necessary that radiation dose would be detect exactly generated from facility related to nuclear, space, radiotherapy center, etc. This paper is to use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Commercial P Channel Power MOSFET(metal oxide field effect transistor) were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial P Channel Power MOSFET as inexpensive radiation sensors.
원자력 관련시설이나 우주 공간, 방사선 치료 센터 등에서 발생되는 방사선량은 정확히 검출되어야 할 필요성이 있다. 본 논문에서는 상용 P채널 Power MOSFET(metal oxide field effect transistor)를 방사선 누적선량 모니터링 센서로 활용하기 위해 실시간 방사선량 검출 측정 시스템을 설계 제작하였고, 시스템의 성능을 분석하기 위하여 Co-60
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