• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.8
• /
• pp.719-726
• /
• 2008

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

• ETRI Journal
• /
• v.27 no.4
• /
• pp.439-445
• /
• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Proceedings of the KIEE Conference
• /
• 2003.11c
• /
• pp.793-796
• /
• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.26 no.5
• /
• pp.376-379
• /
• 2021

The design and performance of a SiC-MOSFET-based 11-kW bi-directional on-board charger (OBC) for electric vehicles is presented. The OBC consists of a three-phase two-level AC/DC converter and a CLLLC resonant converter. All the power devices are implemented with SiC-MOSFETs to reduce the conduction losses generated in the OBC, and the DC-link voltage is designed to track the level of battery voltage in the forward and reverse powering modes. As a result, the CLLLC resonant converter always runs at the switching frequency near the resonant frequency, resulting in high-efficiency operation at the maximum powering modes. As the DC-link voltage varies according to the battery voltage, the AC/DC converter in the proposed OBC adopts an adaptive DC-link voltage controller. The performance of the proposed 11-kW OBC is verified by a prototype converter with the following specifications: three-phase 60-Hz 380-V input, 11-kW capacity, and battery voltage range of 214-413-V, resulting in the conversion efficiency of over 95.0-% in the forward and reverse powering modes.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.14 no.2
• /
• pp.89-96
• /
• 2000

This paper describes the forward type pulse power supply which is the simple circuit configuration and easy to be managed using a power semiconductor switching device(Power-MOSFET) in the view of commercialization. The maximum value of output pulse voltage of the proposed pulse power supply system can be realized by the variation of phase angle($\phi$) of bridge rectifier circuit and also its pulse period is determined by the duty ratio of Power-MOSFET. The principle of basic operating and the operating characteristics of the forward type pulse power supply are estimated by the switching frequency, the variation of phase angle($\phi$)It is shown that theoretical and experimental results are in good agreement by comparing simulation and experimental results of proposed pulse power supply when a lamp type ozonizer can be used as a load. This proposed pulse power system shows that it can be practically used in the future as a power source system in various fields.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.187-194
• /
• 2005

An analysis of the 1/f or flicker noise in FD n-channel Double Gate SOI MOSFET is proposed. In this paper, the variation of power spectral density (PSD) of the equivalent noise voltage and noise current with respect to frequency, channel length and gate-to-source voltage at various temperatures and exponent $C(i.e\;1/f^c$ is reported. The temperature is varied 125 K from to room temperature. The variation of PSD with respect to channel length down to $0.1{\mu}m$ technology is considered. It is analyzed that l/f noise in FD n-channel Double Gate SOI MOSFET is due to both carrierdensity fluctuations and mobility-fluctuations. But controversy still exits to its origin.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.457-461
• /
• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• Proceedings of the KIPE Conference
• /
• 2001.07a
• /
• pp.623-626
• /
• 2001

The neon transformer consists of magnetic circuit and leakage transformer. Since the silicon steel plate is used build a core, the system is big and heavy. Thus it is difficult to install Neon Sign it is even very dangerous if the system experiences a damage when it is installed inside. To overcome these problems, power electronic circuits are applied. The Inverter type Neon transformer using MOSFET is designed and implemented. The experimental results are described.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.2
• /
• pp.181-184
• /
• 2017

This study analyzes the turn-on and turn-off transients of a metal-oxide-semiconductor field-effect transistor (MOSFET) with high-switching frequency systems. In these systems, the voltage distortion becomes serious at the output terminal of a Vienna rectifier by the turn-off delay of the MOSFET. The current has low-order harmonics through this voltage distortion. This paper describes the transient of the turn-off that causes the voltage distortion. The algorithm for reducing the sixth harmonic using a proportional-resonance controller is proposed to improve the current distortion without complex calculation for compensation. The reduction of the current distortion by high-switching frequency is verified by experiment with the 2.5-kW prototype Vienna rectifier.

• KIPE Magazine
• /
• v.25 no.6
• /
• pp.37-40
• /
• 2020