JSTS:Journal of Semiconductor Technology and Science

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Analysis of 1/f Noise in Fully Depleted n-channel Double Gate SOI MOSFET

  • Kushwaha Alok (Department of Electrical Engineering Indian Institute of Technology) ;
  • Pandey Manoj Kumar (Department of Electrical Engineering Indian Institute of Technology) ;
  • Pandey Sujata (Department of Electrical Engineering Indian Institute of Technology) ;
  • Gupta A.K. (Department of Electrical Engineering Indian Institute of Technology)
  • Published : 2005.09.30
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Abstract

An analysis of the 1/f or flicker noise in FD n-channel Double Gate SOI MOSFET is proposed. In this paper, the variation of power spectral density (PSD) of the equivalent noise voltage and noise current with respect to frequency, channel length and gate-to-source voltage at various temperatures and exponent $C(i.e\;1/f^c$ is reported. The temperature is varied 125 K from to room temperature. The variation of PSD with respect to channel length down to $0.1{\mu}m$ technology is considered. It is analyzed that l/f noise in FD n-channel Double Gate SOI MOSFET is due to both carrierdensity fluctuations and mobility-fluctuations. But controversy still exits to its origin.

Keywords

References

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