• Title/Summary/Keyword: positive temperature coefficient

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Developing a Model for Estimating Leaf Temperature of Cnidium officinale Makino Based on Black Globe Temperature (흑구온도를 이용한 천궁 엽온 예측 모델 개발)

  • Seo, Young Jin;Nam, Hyo Hoon;Jang, Won Cheol;Lee, Bu Yong
    • Korean Journal of Medicinal Crop Science
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    • v.26 no.6
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    • pp.447-454
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    • 2018
  • Background: The leaf temperature ($T_{LEAF}$) is one of the most important physical parameters governing water and carbon flux, including evapotranspiration, photosynthesis and respiration. Cnidium officinale is one of the important folk medicines for counteracting a variety of diseases, and is particularly used as a traditional medicinal crop in the treatment of female genital inflammatory diseases. In this study, we developed a model to estimate $T_{Leaf}$ of Cnidium officinale Makino based on black globe temperature ($T_{BGT}$). Methods and Results: This study was performed from April to July 2018 in field characterized by a valley and alluvial fan topography. Databases of $T_{LEAF}$ were curated by infrared thermometry, along with meteorological instruments, including a thermometer, a pyranometer, and an anemometer. Linear regression analysis and Student's t-test were performed to evaluate the performance of the model and significance of the parameters. The correlation coefficient between observed $T_{LEAF}$ and calculated $T_{BGT}$ obtained using an equation, developed to predict $T_{LEAF}$ based on $T_{BGT}$ was very high ($r^2=0.9500$, p < 0.0001). There was a positive relationship between $T_{BGT}$ and solar radiation ($r^2=0.8556$, p < 0.0001), but a negative relationship between $T_{BGT}$ and wind speed ($r^2=0.9707$, p < 0.0001). These results imply that heat exchange in leaves seems to be mainly controlled by solar radiation and wind speed. The correlation coefficient between actual and estimated $T_{BGT}$ was 0.9710 (p < 0.0001). Conclusions: The developed model can be used to accurately estimate the $T_{Leaf}$ of Cnidium officinale Makino and has the potential to become a practical alternative to assessing cold and heat stress.

A study on the Design of a stable Substrate Bias Generator for Low power DRAM's (DRAM 의 저전력 구현을 위한 안정한 기판전압 발생기 설계에 관한 연구)

  • 곽승욱;성양현곽계달
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.703-706
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    • 1998
  • This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

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Preparation and Electrical Properties of PTCR Ceramic Materials (정저항요업체의 제조와 전기적 성질)

  • 정형진;윤상옥
    • Journal of the Korean Ceramic Society
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    • v.22 no.2
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    • pp.11-16
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    • 1985
  • The semiconducting ceramics having positive temperature coefficient of resistivity in he family of 0.25mol% $Sb_2O_3$ doped barium titanates were prepared with AST ($4Al_2O_3$.$9SiO_2$.$3TiO_2$) and $MnO_2$ as additives and these electrical properties were investigated. The PTCR characteristic in these ceramic materials was improved by the addition of AST and $MnO_2$ because the addition of AST decreased the room temperature resistivity and controlled grin size due to the formation of a liquid phase during sintering and the addition of $MnO_2$ improved by forming acceptor level on the intergranular layer. On dependence on the switching time as switching temperature was increased the initial power and switching time increased.

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Conductivity stability of carbon nanofiber/unsaturated polyester nanocomposites

  • Wu, Shi-Hong;Natsuki, Toshiaki;Kurashiki, Ken;Ni, Qing-Qing;Iwamoto, Masaharu;Fujii, Yoshimichi
    • Advanced Composite Materials
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    • v.16 no.3
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    • pp.195-206
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    • 2007
  • Carbon nanofiber (CNF)/unsaturated polyester resin (UPR) was prepared by a solvent evaporation method, and the temperature dependency of electrical conductivity was investigated. The CNF/UPR composites had quite a low percolation threshold due to CNF having a larger aspect ratio and being well dispersed in the UPR matrix. The positive temperature coefficient (PTC) was found in the CNF/UPR composites and it showed stronger effect around the percolation threshold. The electrical resistance of the CNF/UPR composites decreased and had lower temperature dependency with increasing numbers of thermal cycles.

Fabrication and Characteristics of the Integrated Hall Sensor IC For Driving Fan Motors (팬 모터 구동을 위한 집적화된 홀 센서 IC의 제작 및 특성)

  • 이철우
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.73-76
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    • 2002
  • In this paper we present an integrated Hail sensor It for fan motors, fabricated in industrial bipolar process. As a discrete Hall sensor and signal processing circuitry In the fan motor system were Integrated into single chip a temperature dependence of Hall sensitivity and Hall offset voltage can be compensated and cancelled by on-chip circuitry. We Propose a novel temperature compensation of Hall sensitivity with negative temperature coefficient (TC) using the differential amplifier gain with Positive TC. After a package of the chip was sealed using a plastic Package 20 Pins, the thermal and magnetic characteristics were investigated. The obtained experimental results are in agreement with analytical predictions and have more excellent performance than\ulcorner conventional the fan motor system using discrete Hall sensor.

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Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature ($BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성)

  • Kim, D.K.;Jeon, J.B.;Park, C.B.;Song, M.J.;Kang, Y.C.;Park, H.A.;Soo, B.M.;Kim, T.W.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1573-1576
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    • 1997
  • Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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A Study on the Dielctric Properties of the PTC $BaTiO_3$ Ceramic Thin Films

  • Im, Ik-Tae;So, Byung Moon
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.3
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    • pp.63-67
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    • 2012
  • The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

Structural and electrical properties of the NiCr thin film resistors deposited at various temperatures on $SiO_2$/Si substrate

  • Phuong, Nguyen Mai;Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Kim, Chang-Soo;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.337-338
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    • 2006
  • The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

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PRESSURE DEPENDENCE OF THE CURIE TEMPERATURE IN MnAlGe

  • Endo, S.;Matsuzaki, H.;Ono, F.;Kanomata, T.;Kaneko, T.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.380-382
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    • 1995
  • The pressure dependence of the Curie temperature was determined in 2-dimensional like ferromagnet, MnAlGe up to a maximum pressure of 7.5 Gpa through measurements of electric resistance vs temperature curves. The pressure coefficient was positive with a considerably high rate of 9 K/GPa in the low pressure ragion, while it decreased gradually down to one order of magnitude smaller value at the maximum pressure. It was concluded that ther is an upper limit of about 550 K in the super-exchange type ferromagnetic interaction between Mn layers.

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Microwave Dielectric Properties of (Ba1-xNax)(Mg0.5-2xY2xW0.5-xTax)O3 Ceramics

  • Hong, Chang-Bae;Kim, Shin;Kwon, Sun-Ho;Yoon, Sang-Ok
    • Journal of the Korean Ceramic Society
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    • v.56 no.4
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    • pp.399-402
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    • 2019
  • The phase evolution, microstructure, and microwave dielectric properties of (Ba1-xNax)(Mg0.5-2xY2xW0.5-xTax)O3 (0 ≤ x ≤ 0.05) ceramics were investigated. All compositions exhibited a 1:1 ordered perovskite structure. As the value of x increased, the dielectric constant (εr) exhibited a tendency to increase slightly. The quality factor reached the maximum value at x = 0.01. The temperature coefficient of resonant frequency (τf) increased from -19.32 ppm/℃ to -5.64 ppm/℃ in the positive direction as x increased. The dielectric constant (εr), quality factor (Q × f0), and temperature coefficient of resonant frequency (τf) of the composition x = 0.05, i.e., (Ba0.95Na0.05)(Mg0.4Y0.1W0.45Ta0.05)O3 were 19.9, 128,553 GHz, and -5.6 ppm/℃, respectively.