• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• Bulletin of the Korean Chemical Society
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• 제24권9호
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• pp.1303-1307
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• 2003

The low molecular water-soluble chitosan nanoparticles (LMWSC-NPs) were prepared, which was modified with hydrophilic and hydrophobic moieties to evaluate the potential for pharmaceutics application. The synthesis of LMWSC-NPs was identified by FT-IR and $^1H$-NMR spectra. Also, we measured the photon correlation spectroscopy (PCS), transmission electron microscope (TEM) and atomic force microscope (AFM) to investigate the characteristics and morphology of the LMWSC-NPs. At the PCS measurement, the more increase the number of substitutive group, the more decrease the positive charge of LMWSC-NP surface. From the results of TEM and AFM, spherical morphologies were observed, and their sizes were 30-150 nm. Resultantly, LMWSC-NPs prepared in this experiment will be expected as a suitable device for the drug targeting system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• 멤브레인
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• 제32권1호
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• pp.23-32
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• 2022

세균은 분리막, 식품 포장 필름 및 바이오 의료 기기와 같은 다양한 미생물 막의 표면 위에서 자란다. 미생물 막의 성장은 엑소폴리사카라이드의 복잡한 구조 형성과 밀접한 관련이 있다. 미생물 막이 항균제의 대량 수송의 어려움으로 성장하게 될 경우 항균효과는 급격하게 감소한다. 항균 활동을 활성화하기 위해서 막의 표면은 살균 특성이 있는 기능성 물질들로 변형, 코팅 또는 고정한다. 한 가지 아이디어는 막 표면에 양전하 이온을 도입하는 것이다. 양전하 이온인 4차 암모늄 그룹의 존재는 마그네슘이나 칼슘같이 세균 세포벽에 존재하는 2가 금속이온을 대체할 수 있다. 세포막 파괴의 효능은 표면환경에서 사용 가능한 작용제들의 이동성에 달려있다. 이 리뷰에서는 4차 암모늄 그룹, 헬라민(helamine), 쌍성이온(zwitterion)과 같이 여러 살생물제를 포함하고 있는 막들을 다룬다.

• 에너지공학
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• 제23권3호
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• pp.150-156
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• 2014

본 연구는 바나듐 레독스 흐름전지에서 속도 결정단계인 양극 반응($[VO]^{2+}/[VO_2]^+$)을 개선하여 바나듐 반응의 속도를 증가시켜 흐름전지 성능을 향상시키고자 하는 목적으로 진행하엿다. 이를 위해, 다공성 촉매인 CMK3를 사용하여 일반적으로 사용되는 탄소 (Vulcan(XC-72)) 및 상용 Pt/C 촉매 (Johnson-Matthey사 Pt 20wt.%)와 그 성능을 비교하였다. 반응성은 순환주사전류법으로, 구조적 특성은 TEM과 BET&BJH을 이용하여 분석하였다. 또한, 완전지 실험을 통하여 전기화학적으로 나타난 결과가 어떻게 충방전에 적용되는지 확인하였다. 결과, CMK3는 Vulcan(XC-72)보다 6배 향상된 촉매 활성과 2배 이상 향상된 반응가역성이 나타남을 확인하였고, CMK3의 다공성 구조로 인해 Vulcan(XC-72) 보다 큰 표면적을 가지고 있음을 확인하였다. 아울러, CMK3는 백금 촉매가 없음에도, 상용 Pt/C 촉매의 85% 이상의 반응성과 가역성을 나타내었다. 완전지 실험에서 충방전 곡선은 CMK3를 적용한 흐름전지가 오히려 상용 Pt/C 촉매를 적용한 흐름전지보다 좋은 모습을 나타내었다.

• 한국토양비료학회지
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• 제16권4호
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• pp.318-324
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• 1983

이온흡착, 전위차적정, 전기이동법 등을 이용 하여 kaolinite 현탄액의 전기 화학적 성질을 연구하였다. 0.001M 또는 0.1M NaCl 용액중에서 kaolinite로부터 용해되어 나온 알루미늄 이온이 $Na^+$ 및 $Cl^-$과 같이 지시이온으로서 kaolinite 표면에 흡착되는 것을 고려할 때 kaolinite는 pH independent + 및 -전하와 pH dependent + 및 -전하를 모두 가지고 있었다. 증류수와 0.001M NaCl 용액중에서 kaolinite 입자의 전기이동은 전기 이동셀(cell)에서 측정이 시작된 후 시간경과(전기이동 측정시간)에 관계없이 일정한 이동성을 나타냈으나 0.1M NaCl 용액중에서 kaolinite 입자는 등전점 (pH 4.7) 이상에서는 측정시간이 경과함에 따라 전하가 -에서 +로 변화하였다. 즉 최초 10초 동안에는 -전하를 가지며 그 후에는 +전하를 띠면서 전기이동 속도가 단계적으로 증가하게 되는데 약 10분 후에는 일정하게 되었다. 이것은 아마도 제일 바깥쪽 Octahedral layer 표면의 aluminol group의 부분들이 높은 이온 강도의 전해질 용액중에서 분해되어 복잡한 전기이중층(electric double layer)을 이루고 이것이 전기장 내에서 이동할 때 표면으로부터 counter이온들이 점차 떨어져 나가는 과정에서 전하(net charge)의 변화가 생기는 것으로 생각된다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.938-946
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• 2008

This study is on sealing leakage holes where are in landfills to make clay cakes with clay particles, which have a negative surface charge using the method of electrophoresis. Generally, electrophoresis is the motion of charged particles in a colloid under the influence of an electric field; particles with a positive charge go to the cathode and negative to the anode. In this study in order to develop the prevention system of leakages of the leachate in landfills, one-dimensional electrophoresis tests were conducted for determining the properties of the motion of the electrophoresis and cutoff using the method of electrophoresis depending on various the effect factors such as types of clays, concentrations of the clays, and applied electric field. In case of the experiments of determining the optimum clays, Na and Ca-Bentonite, Na and Ca-Montmorillonite, which have greater zeta-potential, cation, exchange capacity as well as ability of cutoff, and Micro-cement inducing cementation were chosen and then the effect of those clays was investigated. Moreover, the properties of the motion and settling of the clays were investigated following electric field varied from 0 to 1V/cm at different concentration of the clays in order to determine both the properties of the motion of the clays and the efficiency of electric field when applying different direct current. Ultimately, the ability of cutoff was examined through measuring the permeability of the clay cakes derived from the one-dimensional electrophoresis tests.

• 대한전자공학회논문지
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• 제24권2호
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• pp.242-247
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• 1987

Electrophysical phenomena at the silicon semiconductor-electrolyte solution interfaces were analyzed based on the zeta potential of the electrical double layer and microelectrophoresis. The suspensions were composed of the p or n-type silicon particles suspended in the KCI or pH buffer solutions. The approximate diameter of the prepared and sampled sioicon semiconductor pardticles was 1.5\ulcorner. The sign of the zeta poetntials of the p and n-type silicon particles in the KCl and pH buffer solution was positive. A range of electrophoretic mobilities of the p and n-type silicons in the KCl solutions was 5.5-8.9x10**-4 cm\ulcornerV-sec and 4.2-7.9x10**-4cm\ulcornerV-sec, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 70.4-114.0mV nad 53.9-101.2mV, respectively. On the other hand, a range of electrophoretic mobilities of the p and n-type silicons in the pH buffer solutions was 1.1x10**-4-2.2x10**-3cm\ulcornerV-sec and 0-2.1x10**-3cm\ulcornerV-sec, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 14.1-281.6mV and 0-268.8mV, respectively. The zeta potentials and electrical double layers of the doped silicon semiconductors are decisively influenced by the positively charged ions in the solutions. The maximum values of the zeta potentials in the KCl solutions appeared at a concentration of about 10-\ulcorner. The isoelectric point of the n-type silicon semiconductors appeared at about a pH 7. The effect of the space charge of the doped silicon semiconductors can be neglected compare with the effect of the surface charge.