Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Carrier Lifetime Analysis of Proton Irradiated SOl Wafer with Pseudo MOSFET Technology

Pseudo MOSFET 기술에 의한 양성자 조사 SOl 웨이퍼의 캐리어 수명 분석

  • 정성훈 (경북대학교 전자전기컴퓨터학부) ;
  • 이용현 (경북대학교 전자전기컴퓨터학부) ;
  • 이재성 (위덕대학교 전자공학과) ;
  • 권영규 (위덕대학교 전자공학과) ;
  • 배영호 (위덕대학교 전자공학과)
  • Published : 2009.09.01
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Abstract

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

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References

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