• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.7
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• pp.1721-1736
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• 2013

Black and gray hole attack is one kind of routing disturbing attacks and can bring great damage to the network. As a result, an efficient algorithm to detect black and gray attack is important. This paper demonstrate an adaptive approach to detecting black and gray hole attacks in ad hoc network based on a cross layer design. In network layer, we proposed a path-based method to overhear the next hop's action. This scheme does not send out extra control packets and saves the system resources of the detecting node. In MAC layer, a collision rate reporting system is established to estimate dynamic detecting threshold so as to lower the false positive rate under high network overload. We choose DSR protocol to test our algorithm and ns-2 as our simulation tool. Our experiment result verifies our theory: the average detection rate is above 90% and the false positive rate is below 10%. Moreover, the adaptive threshold strategy contributes to decrease the false positive rate.

• Journal of ILASS-Korea
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• v.17 no.3
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• pp.140-145
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• 2012

Recent common-rail injector of a diesel engine needs more smaller nozzle hole to meet the stringent emission regulation. But, small nozzle hole diameter can cause nozzle coking which is occurred due to the deposits of post-combustion products. Nozzle coking has a negative effect on the performance of fuel injector because it obstructs the fuel flow inside a nozzle hole. In this study DFSS (Design for six sigma) method was applied to find the effect of nozzle design parameter on nozzle coking. Total 9 injector samples were chosen and tested at diesel engine. The results show that nozzle hole diameter and K-factor have more effect on nozzle coking than A-mass and hole length. Large hole diameter and A-mass, small hole length and K-factor give more positive performance on nozzle coking in these experimental conditions. But, a performance about nozzle coking and exhaust gas emission shows the opposite tendency. Further study is needed to find the relation between nozzle coking and emission characteristic for the optimization of injector nozzle design.

• Journal of the Korean Society of Clothing and Textiles
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• v.24 no.2
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• pp.164-172
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• 2000

The purpose of this study was to investigate the most appropriate arm-hole depth in 9 positions of arm movements. This subjects were four females, college students aged 18 to 23 years old. The clothing size 55 was used for this study. In the experiments for the investigation of the arm-hole depth, the evaluations were performed for aesthetic view, clothing adaptability to arm movements, and quantity of materials pulled up by 9 movements of arm. The results of this study were as follows: 1) In the aesthetic evaluation, there were no significant differences in arm-hole depths. 2) In the evaluation of clothing adaptability to arm movements, the experiment clothes, in which-arm-hole depths were raised, had more positive evaluations especially with the increasing the angle of arm movements. 3) In the evaluation of clothing adaptability to each body areas, there were no significant differences in all body areas except upper arm circumference blade. 4) In the evaluation of quantity of materials pulled up by arm movements, the clothes of B/4-2 arm-hole depth had the least amount pulled up by arm movements, which showed the highest adaptability to arm movement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.300.2-300.2
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• 2013

Periodically shaped pillar-arrays and hole-arrays were fabricated on a Si wafer. Geometric features are similar in a periodic length of 4 ${\mu}m$ and a depth of 2 ${\mu}m$. For the hole-array patterns, positive PR processes were performed. UV exposed PR patterns were removed during a developing process to leave shapes of inversely replicated from a glass photomask. Meanwhile, negative PR processes were taken for the pillar-array patterns. UV exposed PR patterns were remained on a Si substrate having a same feature of patterns of a glass photomask. For an electrical aspect, a pillar structure has a short carrier-collection length resulting in the improved open-circuit voltage of 609 mV from 587 mV of a planar device. An improved performance may be achieved to reduce recombination loss along the patterning surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.89-90
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• 2010

최근 우리는 InGaAs 위에 성장한 InAs 양자점에 GaAs를 얇게 덮음으로써 양자고리를 성장하고, 그 광학적 특성을 분석하였다. [1] 이번 연구에서는 이 양자고리 구조의 전자 구조 및 광학적 특성을 전산모사를 통해 계산하였고, GaAs가 구조의 응력, 압전 포텐셜 및 light-hole 분율에 미치는 영향을 분석하였다. 이론적인 분석을 위해, valence force field 방법을 이용하여 이종 물질간의 격자상수 차이에 의한 격자 변형 및 압전 포텐셜의 변화를 계산하였고, 양자고리 내 전자의 양자화 에너지 및 파동함수를 k p 방법을 통해 얻을 수 있었다. 또한 광학적인 특성 등의 다체 효과를 예측하기 위해 configuration interaction 방법을 사용하였다. 이 연구에서 우리는, GaAs가 InAs에 강한 압축 응력을 가할 것이라는 일반적인 예측과 달리, InGaAs 매트릭스 안에서는 격자상수가 작은 GaAs가 InAs 양자고리에 효과적인 압축 응력을 가할 수 없음을 보였다. 특히 GaAs 층의 두께가 얇을 경우, InGaAs 매트릭스에 의해 인장 응력을 받는 GaAs가 InAs의 응력을 해소하기 충분한 공간을 제공하여, 오히려 InAs의 압축 응력을 약화시키는 것을 알 수 있었다. 이 연구 결과는 응력 분포가 단순한 양자우물 등의 2차원 구조와 달리, 응력 분포가 복잡한 3차원 나노 구조에서는 단순히 격자상수만으로 파장 변화 경향을 예측할 수 없음을 나타낸다. 또한 우리는, GaAs의 큰 negative 이방 응력과 InAs의 작은 positive 이방 응력에 의해 전자와 heavy-hole은 InAs에, light-hole은 GaAs에 구속됨을 보였다. 즉, InAs보다 밴드갭이 큰 GaAs가 전자와 heavy-hole에 대해서는 강한 포텐셜 배리어로 작용하지만 light-hole에 대해서는 포텐셜 우물로 작용하는, 반 우물-반 배리어 특성을 가짐을 알 수 있었다. 이로 인해 GaAs가 있는 양자고리의 light-hole 분율이 GaAs가 없을 경우에 비해 2배에서 8배가량 증가함을 보일 수 있었다. 비슷한 특성이 hole에 대해서는 InP나 InGaAsP 위에 성장한 GaAs 층에서 보고된 바가 있으나, 전자는 InAs로, hole은 GaAs로 분리할 수 있는 3차원 나노 구조에 대한 연구는 이 연구가 처음이다. [2]

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.4
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• pp.563-569
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• 2012

In the semiconductor and display device production processes, the handling of sensitive objects needs new carrying technology. Floating carrying motion is a practical alternative solution for non-contact handling of parts and substrates. This paper presents a study of through paths inside the air pressure pick-up head to generate the floating motion. The air motion by conceptual designed paths inside the head gradually develops positive pressure and vacuum between narrow objects. Positive pressure occurs through the head tip before discharging outside of the head. Negative pressure is developed by evacuating the inside head bottom as result of the radial flow connecting the vertical through-holes. The numerical analysis was done to figure out the stable levitation caused by the two acting forces between surfaces. In comparing with the standard case that the levitation gap gets 0.7-0.9 mm, it confirms the suggested head characteristics to show floating capacity in accordance with the head size, number of through-hole, and locations of through-hole in succession of conceptual design for a prototype.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• 유체기계공업학회:학술대회논문집
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• 2000.12a
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• pp.193-199
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• 2000

The effects of Reynolds number on the non-nulling calibration of a cone-type five-hole probe in low-speed flows have been investigated at the Reynolds numbers of $2.04{\times}10^3,\;4.09{\times}10^3$, and $6.13{\times}10^3$. The calibration is conducted at the pitch and yaw angles in ranges between -35 degrees and 35 degrees with an angle interval of 5 degrees. The result shows that each calibration coefficient, in general, is a function of the pitch and yaw angles, so that the pre-existing calibration data in a nulling mode are not enough in accounting for the full non-nulling calibration characteristics. Due to the interference of the probe stem, the calibration coefficients have more Reynolds number sensitivity at positive pitch angles than at negative ones.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4277-4283
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• 2012

Slip coefficient, whose value is dependent on the condition of contact surface at the friction joint of high tension bolt, is determined by slip load. Because contact area affects slip load, contact area that varies with bolt hole size is also related to the slip coefficient. In this study, we manufactured 32 specimens and performed bending and tension tests in order to examine changes in slip coefficient and load with material type, bolt diameter, and size of bolt hole. Slip load of specimens with oversize bolt hole had strength that was more than 80% higher than the slip load of specimens with standard bolt hole, and it also exceeded the design slip strength. In addition, we observed significant correlation between net-section ratio and slip ratio of specimens with oversize and standard bolt hole. However, some differences between the specimens are thought to have been caused by reduction in initial axial force of high tension bolt, which is an important parameter of slip coefficient. It is self-evident that increased bolt hole size would lead to decrease in design strength as it reduces both slip coefficient and bolt axial force. Nevertheless, we suggest that some flexibility in regulation of bolt hole, as long as it does not threaten the structural stability, may be a positive factor in terms of workability and efficiency.