• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Membrane Journal
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• v.10 no.2
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• pp.55-65
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• 2000

The porous silica membrane was prepared from Si(${OC}_2H_5)_4-H_2O$ system by sol-gel method. To investigate the characteristics of gels and porous silica membrane, we examined gels and porous silica membrane using TG-DTA, X-ray diffractometer, IR spectrophotometer, BET, SEM and TEM. The optimum mole ratio of Si(OC$_2$H$_{5}$)$_4$ : $H_2O$ $C_2$H$_{5}$OH for porous silica membrane was 1 : 4.5 : 4. The porous silica membrane was obtained by heat treatment of the gel above 700 $^{\circ}C$. The specific surface area of sintered gel was 3.8 $m^2$/g to 902.3 $m^2$/g at 100 $^{\circ}C$ to 1100 $^{\circ}C$ The pore size of sintered gel was in the range 20 $\AA$~ 50$\AA$. The particle size of sintered gel was 15 nm to 30 nm at 30$0^{\circ}C$ to 700$^{\circ}C$. The performance of the porous silica membrane was investigated for the separation of $H_2$/$N_2$ gas mixture. Gas separation through porous silica membrane depends upon Knudsen flow and surface flow. The veal separation factor($\alpha$) of $H_2$/$N_2$ was 5.17 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$), and tail separation factor( $\bar{B}$) increased as the pressure of permeation cell Increased.sed.

• Journal of the Korean Ceramic Society
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• v.17 no.4
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• pp.197-202
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• 1980

The oxidation mechanism of the not sintered pellets and sintered bodies of $Si_3N_4$ was investigated. in air over the temperature range of 800~130$0^{\circ}C$. The $\beta$-cristobalite was instantaneously formed and covered the particles of powder packed in the not sintered and weakly sintered porous $Si_3N_4$ bodies by molecular diffusion of oxygen through the porous Si3N4 bodies and an immediate oxidation. The diffusion of oxygen ion through the formed $\beta$-cristobalite surface layer is assumed to control the further oxidation of the $Si_3N_4$ particles of the porous $Si_3N_4$ bodies. The diffusion coefficients and activation energies of oxygen ion through the $\beta$-cristobalite layer were obtained by the use of a derived equation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.229-234
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• 1997

Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

• Proceedings of the KAIS Fall Conference
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• 2012.05b
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• pp.762-764
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• 2012

본 연구에서는 잉곳을 절삭하여 웨이퍼를 만들 때 발생하는 슬러리로부터 SiC를 분리하고, 이를 재생시켜 다공성 SiC 세라믹 히트싱크를 제작하였다. 또한 제작 된 다공성 SiC 세라믹 히트싱크의 열적물성치를 레이저 플래쉬 방법으로 측정하였고 알루미늄 히트싱크와의 비교실험을 통해 다공성 SiC 세라믹 히트싱크의 방열성능을 검증하였다.

• Journal of the Korean Ceramic Society
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• v.43 no.4 s.287
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• pp.199-202
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• 2006

In this study, SiC whiskers were grown on a porous SiC diesel particulate filter for nanoparticle filtering. To grow the whiskers at the inner pore without closing the pores, we used chemical vapor infiltration with a solution source and a dilute. As the deposition time increased, the whiskers grew and formed a network structure. After 180 min of deposition, the mean diameter of the whiskers was 174 nm and the compressive strength was 58.4 MPa. The pores shrank from $10{\mu}m\;to\;0.4{\mu}m$ and, because the whiskers filed the inner pores, the gradient of permeability decreased as the deposition time increased. However, by using the network structure of whiskers deposited for 120 min and 180 min, we obtained a diesel particulate filter with pores of $0.98{\mu}m\;and\;0.4{\mu}m$, respectively. Furthermore, the filter shows better permeability than a porous body with pores of $1{\mu}m$. In short, by filtering the nanoparticulate materials, the network structure of whiskers improves the strength, reduces the pore size and minimizes the permeability drop.

• Journal of Korea Foundry Society
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• v.23 no.1
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• pp.30-39
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• 2003

Porous hybrid preforms were fabricated by reactive sintering using the compacts consisting of SiC particles, Fe and Al powders. Squeeze casting processing was employed to produce the composite in which the matrix phase is Al-Si7Mg. The microstructural change and wear resistance of the composites were investigated in terms of an amount of SiC particles. The wear loss was increased with increasing the contact pressure in the alloy containing SiC particles coated with Cu. The most drastic change was found to the specimen tested at 2.5 MPa of contact pressure. Concerning the alloys containing SiC particles coated with Ni-P, a drastic increase in the wear loss exhibited at 2 MPa of contact pressure in those alloys containing 4 and 8 wt. % of SiC particles coated with Ni-P. In the alloy containing 16 wt. % a proportional increase in wear loss was observed to the change of contact pressure. With respecting to the sliding velocity, the wear loss of the alloy containing SiC particles coated with Cu increased at the initial stage of wear process and then decreased. Similar result was found in the alloys containing SiC particles coated with Ni-P. On the basis of the present results obtained, it was found that wear resistance of the alloys tested was improved to show in the order of the alloy reinforced by coated SiC particles > by uncoated SiC particles > by intermetallic compound without SiC particles.

• Resources Recycling
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• v.19 no.5
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• pp.31-43
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• 2010

To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.

• Journal of the Korean Ceramic Society
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• v.45 no.2
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• pp.132-137
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• 2008

The main purpose of this study is enhancing the filtering efficiency, performance and durability of filter by growing SiC whiskers on cordierite honeycomb substrate. The experiment was performed by Chemical Vapor Infiltration (CVI) in order to control pore morphology of substrate. Increasing the mechanical strength of porous substrate is one of important issues. The formation of "networking structure" in the pore of porous substrate increased mechanical strength. The high pressure gas injection to the specimen showed that a little of whiskers were separated from substrate but additional film coating enhanced the stability of whisker at high pressure gas injection. Particle trap test was performed. More nano-particle was trapped by whisker growth at the pore of substrate. Therefore it is expected that the porous cordierite which deposited the SiC whisker will be the promising material for the application as filter trapping the nano-particles.