• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.209-213
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• 2007

The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and silicon sides, and includes the polysilicon (poly) gate depletion effect. Our compact gate capacitance model exhibits an excellent fit with measured data and parameter values extracted from data are physically acceptable. The data are collected from 0.5, 0.35, 0.25 and $0.18{\mu}m$ CMOS technologies.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.258-261
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• 2009

In this work we present a process to fabricate lowtemperature polysilicon (LTPS) TFTs on polyimide (PI) layers, spin-coated on Si-wafer used as rigid carrier. This process has been then used to fabricate elementary circuits as well as circuits for sensor applications.

• 대한전자공학회논문지
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• 제24권5호
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• pp.786-793
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• 1987

This paper describes the design and fabrication of the polysilicon selfaligned bipolar transistor with 1.6\ulcorner epitaxy and SWAMI isolation technologies. This transistor has two levels of polysilicon. Also emitter and adjacent edge of polysilicon base contact of this PSA device are defined by the same mask, and emitter feature size is 2x4 \ulcorner. DC characteristic of the fabricated transistor was evaluated and analyzed for the SPICE input parameters. The minimum propagation delay time per gate of 330 ps at 1mW was obtained with 41 stage CML ring oscillator.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.31-36
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• 2004

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2017년도 추계 학술논문 발표대회
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• pp.161-162
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• 2017

As the use of cement increases with the development of modern society along with the increase of buildings, environmental pollution intensifies and researches on industrial byproducts are continuing. Research on blast furnace slag and fly ash as industrial byproducts is increasing, and research on industrial byproducts such as polysilicon sludge and paper ash used in this study is increasing. Blast furnace slag, which is one of the industrial byproducts, has been widely studied as a material used with cement. However, in this study, we fabricated lightweight matrix of polysilicon sludge and paper ash replaced based on blast furnace slag, and performed SEM analysis.

• 한국재료학회지
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• 제9권6호
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• pp.604-608
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• 1999

Semiconductor industry requires the development of new technology such as 300 mm technology, suitable for manufacturing the next generation dervices. A promising process for realizing 300 mm technology can be achieved by using enlarged microwave plasma chemical vapor deposition (MWCVD) technology. In this work, we used radial line slot antenna for enlarging microwave plasma area, and carried ut the deposition of polysilicon films using enlarged MWCVD for the first time in Korea. The results was as follows. Deposited polysilicon films showed various degrees of crystallinity as well as epitaxy to silicon substrates even at low temperature of $300^{\circ}C$. Deposition rates also controled crystallization behavior and slo deposition rates showed very high crystallinity. It could be said that enlarged MWCVD system and technology was worth to get attraction as one os future technologies for 1 G DRAM era.

• 한국정밀공학회지
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• 제21권7호
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• pp.171-178
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• 2004

Techniques and procedures are presented for measuring mechanical properties on thin-film Polysilicon. Narrow platinum lines are deposited 250 ${\mu}{\textrm}{m}$ apart on tensile specimens that are 3.5 ${\mu}{\textrm}{m}$ thick and 600 ${\mu}{\textrm}{m}$ wide. Load is applied by a piezo-actuator and by hanging weights. Strain is measured by an ISDC at temperatures up to 500 $^{\circ}C$. Measurements of the elastic modulus with jig modifications, loading speed and temperature change are presented first. And then, the preliminary data for the coefficient of thermal expansion and creep behavior are presented as a reference.

• 한국정밀공학회지
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• 제17권11호
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• pp.81-87
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• 2000

A new resonator that is fabricated by single polysilicon layer process is presented. The resonator can move in two orthogonal direction on the plane parallel to the substrate. And the resonant frequencies of the two modes are intrinsically designed to be identical since the overall structure of the resonator is symmetric about the two directions of motion. Since the resonator ideally has two identical vibration mode, it can be applied to various micro-devices that requires multi DOF motion, especially to microgyroscopes. To investigate the feasibility of application of the resonator, dynamic model of the resonator including the nonlinear behavior of driving electrodes is derived and evaluated with the fabricated one, and the self-tuning characteristics are proved though experiments.

• 대한전자공학회논문지
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• 제23권6호
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• 한국건설순환자원학회논문집
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• 제2권4호
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• pp.328-334
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• 2014

본 연구는 태양광 소재인 폴리실리콘 제조시 부산되는 슬러지를 시멘트 클링커의 원료로서 사용 가능성에 대해 검토하였다. 시멘트 클링커를 제조 할 때, 폴리실리콘의 염소 성분이 소성과정에서 광화제로 작용하여 f-CaO 생성량을 낮추고, 시멘트 클링커 광물 중 $C_3S$ 생성량을 증가시킨 것으로 평가되었다. 또한 제조한 시멘트의 물리적 특성을 측정하였다. 제조 시멘트는 폴리실리콘 슬러지 함유량이 증가할수록 응결 시간을 단축시켰다. 이러한 결과는 염소 성분이 수화촉진제로써 작용해서 $C_3S$의 수화에 의해서 생성된 수산화칼슘의 용해를 촉진하기 때문이다. 또한 이러한 이유로 재령 1일에서의 모르타르 압축강도는 폴리실리콘 슬러지 함유량이 많을수록 컸다. 재령 3, 7, 28일 압축강도는 폴리실리콘 슬러지 첨가량 5wt%까지 증진되는 경향을 나타냈다. 이러한 이유는 클링커 제조 시 염소 성분이 $C_3S$ 광물 생성량을 증가시킴으로 3일 이후 압축강도를 증진시킨 것이다.