• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.50-54
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• 2004

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is already developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, the effects of kinetics parameters on the extraction of effective elastic properties of polycrystalline thin-films are studied by using statistical method. The effects of the fraction of the potential site( $f_{P}$ ) and the nucleation probability( $P_{N}$ ) among the parameters for deposition process of microstructure on the extraction of effective elastic properties of polycrystalline thin-films are studied.d.d.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.77-85
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• 2005

Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At $360 mJ/cm^2$, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.55-62
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• 1992

Polycrystalline silicon ingots were manufactured using the casting method for polycrystalline silicon solar cells. These ingots were cut into wafers and ten n$^{+}$p type solar cells were made through the following simple process` surface etching, n$^{+}$p junction formation, metalization and annealing. For the grain boundary passivation, the samples were oxidized in O$_2$ for 5 min. at 80$0^{\circ}C$ prior to diffusion in Ar for 100 min. at 95$0^{\circ}C$. The conversion efficiency of polycrystalline silicon solar cells made from these wafers showed about 70-80% of those of the single crystalline silicon solar cell and superior conversion efficiency, compared to those of commercial polycrystalline wafers of Wacker Chemie. The maximum conversion efficiency of our wafers was indicated about 8%(without AR coating) in spite of such a simple fabrication method.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.615-621
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• 2016

SiC-polycrystalline fiber (Tyranno SA, Ube Industries, Ltd.) shows very high heat-resistance and excellent mechanical properties up to very high temperatures. However, further increase in the strength is required. Up to now, we have already clarified the relationship between the strength and the defect-size of the SiC-polycrystalline fiber. The defects are formed during the conversion process from the raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber. In this conversion process, a degradation of the Si-Al-C-O fiber and a subsequent sintering of the degraded fiber proceed as well, accompanied by a release of CO gas and compositional changes, to obtain the dense SiC-polycrystalline fiber. Since these changes proceed in each filament, the strict control should be needed to minimize residual defects on the surface and in the inside of each filament for achieving the higher strength. In this paper, the controlling factors of the fiber strength and the fine structure will appear.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.75-76
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• 2006

In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.314-317
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The $1.2{\mu}m$ and $0.4{\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 On long cantilever resonators were -9.79, -7.72 and -8.0 ppm/$^{\circ}C$. On the other hand, TCF of 60, 80 and $100{\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 ppm/$^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• Composites Research
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• v.29 no.6
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• pp.375-378
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• 2016

Characteristics of nanocrystalline materials are known substantially dependent on the microstructure such as grain size, crystal orientation, and grain boundary. Thus it is desired to have systematic characterization methods on the various nanomaterials with complex geometries, especially in low dimensional nature. One of the interested nanomaterials would be a pure two-dimensional material, graphene, with superior mechanical, thermal, and electrical properties. In this study, mechanical properties of "polycrystalline" graphene were numerically investigated by molecular dynamics simulations. Subdomains with various sizes would be generated in the polycrystalline graphene during the fabrication such as chemical vapor deposition process. The atomic models of polycrystalline graphene were generated using Voronoi tessellation method. Stress strain curves for tensile deformation were obtained for various grain sizes (5~40 nm) and their mechanical properties were determined. It was found that, as the grain size increases, Young's modulus increases showing the reverse Hall-Petch effect. However, the fracture strain decreases in the same region, while the ultimate tensile strength (UTS) rather shows slight increasing behavior. We found that the polycrystalline graphene shows the reverse Hall-Petch effect over the simulated domain of grain size (< 40 nm).

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• Journal of the Korean Society of Hazard Mitigation
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• v.11 no.2
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• pp.39-44
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• 2011

Plastic gradient from geometrically necessary dislocation(GND) can strongly affect micro-scale plastic behavior of polycrystalline solids. In this research, mechanical behavior of polycrystalline solid is investigated using the finite element method incorporating plastic gradient from GND effect. Gradient hardness coefficient and material length parameter are used to evaluate the effect of the plastic gradient on the behavior of materials. Sensitivity of the modeling parameters on the plastic gradient from GND is presented and effects of plastic gradient and material parameters on the behavior of single crystal inside a polycrystalline aggregate are investigated. It is confirmed that the plastic gradient from GND amplifies hardening response of polycrystals and affects single crystal behavior embedded in polycrystalline solids.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.130-130
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.