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http://dx.doi.org/10.5695/JKISE.2020.53.3.109

Characteristics of a Polycrystalline Diamond Thin Film Deposited on a-plane Sapphire Substrate  

Tan, Xing Yan (Department of Nano Fusion Technology, Pusan National University)
Jang, Tae Hwan (Department of Nano Fusion Technology, Pusan National University)
Kwon, Jin Uk (Department of Nano Fusion Technology, Pusan National University)
Kim, Tae Gyu (Department of Nanomechatronics Engineering, Pusan National University)
Publication Information
Journal of the Korean institute of surface engineering / v.53, no.3, 2020 , pp. 109-115 More about this Journal
Abstract
In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH4/H2), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.
Keywords
a-plane sapphire substrate; Polycrystalline Diamond; MPECVD; Raman spectra; XRD; AFM;
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