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Characteristics of a Polycrystalline Diamond Thin Film Deposited on a-plane Sapphire Substrate

a-plane 사파이어기판에 증착된 Polycrystalline Diamond 박막의 특성

  • Tan, Xing Yan (Department of Nano Fusion Technology, Pusan National University) ;
  • Jang, Tae Hwan (Department of Nano Fusion Technology, Pusan National University) ;
  • Kwon, Jin Uk (Department of Nano Fusion Technology, Pusan National University) ;
  • Kim, Tae Gyu (Department of Nanomechatronics Engineering, Pusan National University)
  • 싱얀탄 (부산대학교 나노융합기술학과) ;
  • 장태환 (부산대학교 나노융합기술학과) ;
  • 권진욱 (부산대학교 나노융합기술학과) ;
  • 김태규 (부산대학교 나노메카트로닉스공학과)
  • Received : 2020.05.10
  • Accepted : 2020.06.27
  • Published : 2020.06.30

Abstract

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH4/H2), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

Keywords

References

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