Investigation of Polycrystalline Silicon Photodiodes Utilizing Vertically Directed Current Path

수직 방향 전류를 이용한 폴리실리콘 포토다이오드에 관한 연구

In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.