• 한국결정성장학회지
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• 제3권2호
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• pp.149-156
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• 1993

Si과 흑연 주형사이에 release layer로서 $CaCl_2$를 사용하여 vold와 crack이 없는 건전한 다결정 Si ingot를 제조하였다. 원소재로서 merallurgical-grade Si를 사용하였으며, 결정성장속도와 응고분율에 따른 불순물농도변화, X-선 회절분석, 비저항측정등을 행하였다. X-선 회절분석 결과 R=0.5mm/min으로 성장된 다결정 Si의 우선성장방향은 (220)면이고, R=0.2mm/min의 경우 우선성장방향은 (111)면임을 확인하였다. 또한 결정성장속도 및 응고분율의 증가에 따라 비저항값은 감소하는 경향을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.387-388
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• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.717-720
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• 2007

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

• 대한안전경영과학회지
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• 제4권2호
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• 한국재료학회지
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• 제14권5호
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.99-103
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• 1999

Compressive creep of dense polycrystalline $BaTiO_3$, with average grain sizes of 19.3-52.4$\mu\textrm{m}$, has been investigated at 1100-$1300^{\circ}C$ in air or under controlled atmospheres $(10^2-10^5Pa \;O_2)$. Some cavity growth occurred during deformation because of non-steady-state damage accumulation in the form of cavitation. Comparison of the creep data of polycrystalline BaTiO3 with existing diffusivity and creep data for perovskite oxides suggested that deformation of polycrystalline $BaTiO_3$ was controlled by the extrinsic lattice diffusion of barium or titanium.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1313-1314
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1,3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XRD and FT-IR. Residual strain was investigated by Raman scattering. The surface morphology was also observed by AFM and voids or dislocations between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• 한국기계가공학회지
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• 제20권9호
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• pp.48-56
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• 2021

Tungsten carbide (WC) circular saws have been widely used to cut plywood. Recently, expensive polycrystalline diamond (PCD) were adopted to extend the tool life of circular saws. This study developed a PCD-WC combination circular saw and compared its performance with that of existing WC and PCD saws. Flank wear of WC saw blades and edge chipping of rectangular PCD was observed during the experiments. The PCD-WC saw replaced half of the chamfered teeth with PCD and applied tough WC for all rectangular teeth. In the experiments, edge chipping was not observed in rectangular WC teeth and the flank wear of chamfered teeth was decreased compared with that of conventional circular saws.

• 한국결정성장학회지
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• 제29권3호
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• pp.140-142
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• 2019

자외선 LED용 기판소재로 응용가능한 AlN(질화알루미늄) 단결정을 물리기상이동법(Physical Vapor Transport Method)으로 성장하기 위해 성장 거동을 조사하였다. 다결정의 종자결정을 사용하였으며, 직경은 3인치급이었고, 120시간 동안 성장공정을 수행하여 길이 약 4 mm의 다결정상을 얻었다. 본 연구에서는 성장 조건과 대형의 도가니를 사용하였을 경우의 성장 거동에 대하여 고찰하여 보고자 하였다.