한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.717-720
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- 2007
3.5 inch QCIF AMOLED Panel with Ultra Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
- Kim, Yong-Hae (IT Convergence & Comonents Lab., ETRI) ;
- Chung, Choong-Heui (IT Convergence & Comonents Lab., ETRI) ;
- Moon, Jae-Hyun (IT Convergence & Comonents Lab., ETRI) ;
- Park, Dong-Jin (IT Convergence & Comonents Lab., ETRI) ;
- Lee, Su-Jae (IT Convergence & Comonents Lab., ETRI) ;
- Kim, Gi-Heon (IT Convergence & Comonents Lab., ETRI) ;
- Song, Yoon-Ho (IT Convergence & Comonents Lab., ETRI)
- Published : 2007.08.27
Abstract
We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.