3.5 inch QCIF AMOLED Panel with Ultra Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Published : 2007.08.27

Abstract

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

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