• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.28-31
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• 2002

The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.233-236
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• 2000

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.251-251
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• 2008

In this work, appropriate corrugated structure is suggested to increase resonant frequency of resonators. Micro beam resonators based on polycrystalline 3C-SiC films which have a two-side corrugation along the length of beams were simulated by finite element method and compared to a same - size flat rectangular. With the dimension of $36\times12\times0.5{\mu}m^3$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, with this size only corrugation width of $6{\mu}m$ and depth of $0.4{\mu}m$, the corrugated cantilever reaches the resonant frequency at 1.252 MHz, and is 68% larger than that of flat type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.332-333
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• 2008

DC magnetron sputtering was used to deposit p-type polycrystalline silicon on n-type Si(100) wafer. The influence of film microstructure properties on deposition parameters (DC power, substrate temperature, pressure) was investigated. The substrate temperature and pressure have the important influence on depositing the poly-Si thin films. Smooth ploy-Si films were obtained in (331) orientation and the average grain sizes are ranged in 25-30nm. The grain sizes of films deposited at low pressure of 10mTorr are a little larger than those deposited at high pressure of 15mTorr.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.19-22
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• 2004

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is already developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, the effective elastic properties of polysilicon, $BaTiO_3\;and\;ZrTiO_4$ are extracted using this system and by employing the fraction of the potential site($f_P$) as a kinetics parameter for the microstructure evolution, the statistical tendency of these materials is studied.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.3
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• pp.284-291
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• 2013

Micro cutting of titanium alloy by polycrystalline diamond (PCD) tools was studied. Micro electro discharge machining (MEDM) was used to fabricate customized micro shaping tools from PCD blank. The tool was used to machine micro grooves on Ti alloy and the effects of depth of cut and machining length on tool wear, burr and surface roughness were studied. The shaping tool has cutting edge of a few ${\mu}m$. The crater size of the tool surface was increased with increasing capacitance of EDM machining conditions, which was used to control the surface roughness of the machined micro grooves.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2006.04a
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• pp.531-534
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• 2006

A multi-scale (macro-micro) finite element framework for analysis of polycrystalline solids is suggested. The proposed frame work is strongly-coupled in a sense that the two scale calculation is performed at the same time. The issue of averaging micro-scale material stress and stiffness is addressed and a strategy is proposed. The proposed framework is implemented and applied to two examples having different geometries and loading modes. It is concluded that the proposed multi-scale framework can be used for more detailed and accurate analysis compared with the single-scale finite element analysis.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.183-189
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• 1992

The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• Korean Journal of Computational Design and Engineering
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• v.2 no.2
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• pp.71-76
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• 1997

The deformations of polycrystalline materials are modelled by linking a constitutive equation for the crystallographic slip of a single crystal to the macroscopic behavior of the aggregate. In this study, anisotropic elasticity (lattice stretching) of a cubic crystal is incoporated into the anisotropic plasticity from crystallographic slip. The constitutive description for the aggregate, derived from a crystal plasticity theory, is used to formulate a Consistent Penalty Finite Element Method for the anisotropic elasto-viscoplastic deformation of polycrystalline materials. As an application, a plane-strain forging process is simulated and the effects of the initial textures on the deformation behavior of the workpiece are examined.