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http://dx.doi.org/10.4313/TEEM.2002.3.2.028

X-ray Response Characteristic of Zn in the Polycrystalline Cd1-xZnxTe Detector for Digital Radiography  

Kang, Sang-Sik (Department of Biomedical Science and Engineering, Inje University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.2, 2002 , pp. 28-31 More about this Journal
Abstract
The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.
Keywords
CdZnTe detectors; Digital radiography; Leakage current; X-ray sensitivity;
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