• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.81-89
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• 2015

A strain-gradient crystal plasticity constitutive model was developed in order to predict the Hall-Petch behavior of a Ni-base polycrystalline superalloy. The constitutive model involves statistically stored dislocation and geometrically necessary dislocation densities, which were incorporated into the Bailey-Hirsch type flow stress equation with six strength interaction coefficients. A strain-gradient term (called slip-system lattice incompatibility) developed by Acharya was used to calculate the geometrically necessary dislocation density. The description of Kocks-Argon-Ashby type thermally activated strain rate was also used to represent the shear rate of an individual slip system. The constitutive model was implemented in a user material subroutine for crystal plasticity finite element method simulations. The grain size dependence of the flow stress (viz., the Hall-Petch behavior) was predicted for a Ni-base polycrystalline superalloy NIMONIC PE16. Simulation results showed that the present constitutive model fairly reasonably predicts 0.2%-offset yield stresses in a limited range of the grain size.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1035-1038
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• 2002

The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.59-65
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• 1993

The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at $500^{\circ}C$ was amorphous, began to show crystalline at $600^{\circ}C$, and became polycrystalline at $700^{\circ}C$. After doping boron at $900^{\circ}C$for 10 minutes, the resistivity of the films was in the range of $0.1{\Omega}cm~1.5{\Omega}cm$, the boron density was $9.4\times10^{15}~2.1\times{10}^{17}cm^{-3}$, and the grain size was $107{\AA}~191{\AA}$.

• Carbon letters
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• v.23
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• pp.1-8
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• 2017

Polycrystalline diamond (PCD) tools possessing high hardness and abrasive wear resistance are particularly suited for drilling of carbon fiber reinforced plastic (CFRP) composites, where tool life and consistent hole quality are important. While PCD presents superior performance when drilling CFRP, it is unclear how it performs when drilling multi-stack materials such as CFRP-titanium (Ti) stacks. This comparative study aims to investigate drilling of a Ti plate stacked on a CFRP panel when using PCD tools. The first sequence of the drilling experiments was to drill 20 holes in CFRP only. CFRP-Ti stacks were then drilled for the next 20 holes with the same drill bit. CFRP holes and CFRP-Ti stack holes were evaluated in terms of machined hole quality. The main tool wear mechanism of PCD drills is micro-fractures that occur when machining the Ti plate of the stack. Tool wear increases the instability and the operation temperature when machining the Ti plate. This results in high drilling forces, large hole diameter errors, high surface roughness, wider CFRP exit thermal damage, and taller exit Ti burrs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.67-77
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• 1995

Abstract The principal factor affecting the increased penetration of photovoltaics into the marketplace is cost. For traditional crystalline silicon modules, half of the cost is that of the silicon wafers. As a result much effort has centered on reducing this cost by the use of thin film technologies. Substantial technical progress has been made towards improving the efficiencies of polycrystalline thin film solar cells to reduce the production costs. Progress in semiconductor deposition techniques has also been rapid. The most mature of these are based on polycrystalline silicon (p - Si), amorphous silicon (a - Si), copper indium diselenide $SuInSe_2$(CIS), and cadmium telluride (CdTe). This paper explores the recent advances in the development of polycrystalline thin film solar cells.