Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 3 Issue 1
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- Pages.59-65
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- 1993
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
Fabrication of Boron-Doped Polycrystalline Silicon Films for the Pressure Sensor Application
압력센서용 Boron이 첨가된 다결정 Silicom 박막의 제조
Abstract
The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at
저항가열식 고진공증착기를 이용하여 압력센서로 사용될 수 있는 boron이 첨가된 다결정 silicon 박막이 제조되었다. 다결정 silicon 박막은 여러온도에서 quartz 기판위에 증착되었으며, boron은 BN 웨이퍼를 사용하여 확산로에서 doping하였다.
Keywords