• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.399-405
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• 2018

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.

• Fashion & Textile Research Journal
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• v.22 no.2
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• pp.233-239
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• 2020

We proposed a simple process of fabricating electroconductive textiles by coating conductive polymer PEDOT:PSS (Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) on biocompatible PLA (Poly Lactic Acid) nanofiber web for application to smart healthcare. Electroconductive textiles were obtained by a drop-coating process using different amounts of PEDOT:PSS solutions., DMSO (dimethyl sulfoxide) was then used as an additive in the post-treatment process to improve conductivity. The surface morphology of the specimens was observed by FE-SEM. The chemical structures of the specimens were characterized using FTIR. The electrical properties (linear and sheet resistance) of the specimens were measured. The effect of the bending angles on the electrical properties was also investigated to confirm their applicability as wearable smart textiles. FE-SEM and FTIR analysis confirmed that the deposition of PEDOT:PSS on the PLA nanofiber web surface was successful. The conductivity of the PEDOT:PSS/PLA nanofiber web was enhanced up to 1.5 ml with an increasing amount of PEDOT:PSS solutions, but there was no significant difference at 2.0 ml. The optimum condition of PEDOT:PSS deposition was established to 1.5 ml. Even when the specimen coated with 1.5 ml was bent every 30°, the change in the electrical resistance values was still low within 3.7 Ω. It confirmed that stable electrical performance was maintained and proved the applicability as a flexible textile sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.475-475
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• 2012

백색 유기발광소자는 매우 얇고, 가볍고, 저전력 구동이 가능하다는 점에서 전색 디스플레이나 조명 시장에서 많은 관심을 끌고 있다. 고효율을 가진 백색 유기발광소자의 제작을 위해서는 일반적으로 쉐도우 마스크를 사용하여 발광 패턴을 만들기 때문에 제작 비용이 비싸다는 단점을 가진다. 본 논문에서는 제작 공정이 간단하고, 저비용의 장점을 가지는 용액 공정을 사용하여 나노 구멍 구조를 가지는 적색 고분자와 청색 저분자의 혼합 발광층으로 백색 유기발광소자를 제작하였다. 이 나노 구멍 구조를 가지는 poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylene vinylene] (MEH-PPV)/ 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) 혼합 발광층의 전기적, 광학적 특성을 분석하기 위하여 MEH-PPV/MADN 적층 구조를 가지는 백색 유기발광소자를 제작하여 비교, 분석하였다. 나노 구멍 구조를 가지는 혼합 발광층의 발광 스펙트럼에서 적층 구조보다 청색 파장대의 빛의 비율을 높일 수 있었다. 그 이유는 나노 구멍 구조를 가지는 혼합 발광층에서 정공수송층인 poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) 층과 청색 발광층 사이의 일부분 접합부분의 정공 주입 때문이다. 또한, 혼합 발광층을 가진 백색 유기발광소자의 전류 밀도와 휘도는 구멍을 가진 MEH-PPV 층 때문에 상당히 증가하는 것을 알 수 있다. 혼합 발광층을 가진 백색 유기발광소자의 적색과 청색의 균형은 나노 구멍의 크기를 통해서 조절이 가능하고, 색 안정성은 정공 주입층과 청색 발광층 사이의 직접 접촉에 의한 구동 전압의 변화를 따라 증가시킬 수 있었다. 그 결과, 혼합 발광층을 가지는 백색 유기발광소자에서 적색과 청색 발광층의 발광 균형은 스핀 코팅 속도가 3,000 rpm일 때, 최적의 결과를 나타내었다. 이러한 실험 결과들은 저분자/고분자로 이루어진 혼합 발광층을 가진 백색 유기발광소자에서의 전자와 정공의 전달 및 발광 메커니즘을 분석할 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.40-44
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• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.61-65
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• 2015

We have fabricated poly(3,4-ethylenedioxythiophene) : poly(4-styrenesulfonate) (PEDOT : PSS) thin films using a slotdie coater for the applications of OLED lightings. It is demonstrated that the properties of slot-die coated PEDOT : PSS films are comparable with those of spin-coated ones. Namely, the average and peak-to-peak roughness of the slot-die coated 50-nm-thick PEDOT : PSS film are measured to be as low as 0.247 nm and 1.3 nm, respectively. Moreover, we have obtained excellent thickness uniformity (~1.91%). With the slot-die coated PEDOT : PSS films, we have fabricated green phosphorescent OLED devices. For comparison, we have also fabricated OLED devices with spin-coated PEDOT : PSS films. Both show almost no discrepancy in device performance. The power efficiency (25.4 lm/W) and emission uniformity (77%) of OLEDs with slot-die coated PEDOT : PSS films are shown to be slightly lower than those (27.3 lm/W, 80%) of OLEDs with spin-coated PEDOT : PSS films at the luminance of 1,000nit, increasing the feasibility of using a slot-die coating process for the fabrication of large-area OLED lighting sources at a competitive price.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.69-74
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• 2019

The aim of this work is to investigate the effect of the microtip length in a slot-die head on coating of a fine poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) stripe. To this end, we have employed a meniscus guide with a 150-㎛-wide microtip and performed roll-to-roll slot-die coatings by varying its length between 500 ㎛ and 50 ㎛. When the microtip length is 150 ㎛ or shorter, we have observed three unexpected phenomena; 1) though the solution spreads much wider than the microtip width, yet the coated stripe width is almost the same as the microtip width, 2) the stripe width decreases, but the stripe thickness is rather increased with increasing coating speed at a fixed flow rate, 3) we obtain stripes much narrower than the microtip width at high coating speeds. It is due to the fact that 1) the meniscus is not well controlled by a short microtip, 2) the main stream of solution from the outlet is very close to the substrate and thus the distributed solution along the head lip merges with the main stream, and 3) the solution is not spread over the entire microtip end at high coating speeds, causing a tiny wobble in the meniscus. Using the 150-㎛-wide and 250-㎛-long microtip, we have fabricated 153-㎛-wide and 94-nm-thick PEDOT:PSS stripe at the maximum coating speed of 13 mm/s. To demonstrate its applicability in solution-processable organic light-emitting diodes (OLEDs), we have also fabricated an OLED device with the fine PEDOT:PSS stripe and obtained strong light emission from it.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.1-5
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• 2018

Elastic resistive pressure sensor is fabricated by a direct spray coating of silver nanowires (AgNWs) on uncured polydimethylsiloxane (PDMS) and an additional coating of a conductive polymer, poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). To improve the sensitive and stability, we have fabricated sandwich-structured AgNW/polymer sensor where two AgNW/polymer-coated PDMS films are laminated with the conducting surfaces contacted by pressure lamination. It shows a resistance decrease upon loading due to the formation of dense network of AgNWs. It is demonstrated that the sandwich-structured AgNW/polymer sensor exhibits very high sensitivity ($2.59kPa^{-1}$) and gauge factor (37.8) in the low pressure regime. It can also detect a subtle placement and removal of a weight as low as 3.4 mg, the corresponding pressure of which is about 5.4 Pa. It is shown that the protrusion of AgNWs from PDMS is suppressed substantially by the over-coated PEDOT:PSS layer, thereby reducing hysteresis and rendering the sensor more stable.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.485-485
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• 2012

유기발광소자는 고휘도, 넓은 시야각, 빠른 응답속도, 높은 색재현성, 좋은 유연성의 소자특성 때문에 디스플레이 제품에 많이 응용되고 연구가 활발하게 진행되고 있다. 최근에 저소비전력, 고휘도, 소형화 및 장수명의 장점을 가진 유기발광소자의 상용화가 진행되면서 차세대 디스플레이소자로서 관심을 끌게 되었다. 고분자 유기발광소자는 저분자 유기발광소자에 비해 용액 공정법으로 박막을 형성할 수 있어 제조 비용이 적게 들며 대면적 디스플레이를 제작하는데 유리하기 때문에 많은 연구가 진행되고 있다. 고분자 유기발광소자에서 저전력 소자를 위한 저전압 구동 및 전력 효율을 향상시키기 위한 연구는 대단히 중요하다. 본 연구에서는 고분자 유기발광소자의 구동 전압을 낮추기 위해서 그래핀 정공 주입층을 삽입한 고분자 유기발광소자를 화학적 진공 증착법과 용액 공정을 사용하여 제작하였다. 그래핀 정공 주입층을 삽입한 고분자 유기발광소자는 Indium-tin-oxide(ITO) 투명 전극/그래핀 정공주입층/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT: PSS)/poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylenevinylene] (MEH-PPV) 층/lithium quinolate (Liq)/aluminium (Al) 전극의 구조를 가진다. 그래핀 정공주입층을 삽입한 고분자 유기발광소자에서 향상된 정공 주입능력을 통해 구동전압을 낮아지는 현상을 분석하기 위해서 전기적 및 광학적 특성을 조사하였다. 그래핀 정공주입층의 광학적 특성을 분석하기 위해서 빛의 투과도 측정을 한 결과 90% 이상의 값을 얻었다. 그래핀 정공 주입층이 소자에 미치는 영향을 조사하기 위하여 ITO/PEDOT:PSS소자와 ITO/그래핀 층/PEDOT:PSS 소자를 각각 제작하여 원자힘 현미경 측정을 하였다. 그래핀박막층을 삽입할 경우, 그래핀박막층을 삽입하지 않았을 때보다 표면 거칠기가 감소하는 것을 알 수 있었다. 이는 산성을 띠는 PEDOT:PSS 용액이 ITO 투명 전극을 손상시키는 것을 방지하고, 표면 거칠기를 감소시켜 누설 전류를 낮출 수 있다는 사실을 보여준다. 또한, 그래핀 박막은 높은 전기 전도도를 가지기 때문에 그래핀 정공주입층을 삽입하였을 때, 높은 전류 밀도 및 발광 휘도와 더 낮은 구동 전압을 확인할 수 있었다. 이러한 결과는 ITO와 PEDOT:PSS의 계면에서의 전공의 주입 능력을 그래핀박막층이 향상시켜 저전압, 고효율 소자를 제작할 수 있다는 것을 보여준다.

• Applied Chemistry for Engineering
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• v.29 no.6
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• pp.734-739
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• 2018

We successfully coated poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS) on CVD graphene by adding poly(vinyl alcohol) (PVA) to PEDOT : PSS. Extensive studies on the wettability of coating solutions and electrical properties of formed films led us to conclude that PVA with 89% of the degree of saponification and the molecular weight of less than $100,000gmol^{-1}$ produced optimum results. Furthermore, the optimum content of PVA was found to be 5% of PEDOT : PSS by the solid weight. The film coated by PEDOT : PSS with PVA on CVD graphene displayed a conspicuous improvement in the surface roughness, adhesive property, bending durability and stability in resistance at $160^{\circ}C$, compared to those of using CVD graphene films.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator