• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1283-1288
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• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.922-927
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• 2003

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.206-209
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• 2002

The fixed abrasive pad(FAP) has been introduced in chemical mechanical polishing(CMP) field recently. In comparison with the general CMP which uses the slurry including abrasives, FAP takes advantage of planarity. resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of $Al_2$O$_3$-FAP using hydrophilic polymers with swelling characteristic in water and explains the self.texturing phenomenon. It also focuses on the chemical effects on tungsten film and the FAP is evaluated on the removal rate as a function of chemicals such as oxidizer, catalyst, and acid. The removal rate is achieved up to 1000A1min as about 70 percents of the general one. In the future. the research has a plan of the advanced FAP and chemicals in tungsten CMP considering micro-scratch, life-time, and within wafer non-uniformity.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.4 s.235
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• pp.435-440
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• 2005

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.11
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• pp.46-56
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• 1996

Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.355-356
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• 2008

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.125-128
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• 2004

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some Previous works shows that RR is determined by production of pressure and velocity and NC is also largely affected by velocity of flow-field during CMP. This study is about the direct measurement of velocity of slurry during CMP and reconstruction whole flow-field by Particle Image Velocimetry(PIV) Techniques. Typical PIV system is tuned adequately for inspecting CMP and Slurry Flow-field is measured by changing both Pad RPM and Carrier RPM. The results show that velocity is majorly determined not by Carrier RPM, but by Pad RPM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1312-1315
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• 2004

Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.