• 한국전기전자재료학회논문지
• /
• 제18권4호
• /
• pp.303-308
• /
• 2005

In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.231-234
• /
• 2004

Chemical mechanical polishing(CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with the slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various coefficient of friction was attained and analyzed with the kind of pad, abrasive and the abrasive concentration. The lubrication regime is also classified with ${\eta}v/p(\eta,\;v\;and\;p;$ the viscosity, relative velocity and pressure). Especially, the co-relation not only between the friction force and the removal per unit distance but also between the coefficient of friction and within-wafer-nonuniformity was estimated.

• 한국광학회지
• /
• 제10권5호
• /
• pp.419-423
• /
• 1999

측면 연마된 단일모드 광섬유와 다중모드 폴리머 평면도파로 사이의 소산장 결합을 이용한 광필터를 제작하고 그 특성을 측정하였다. 소자의 편광의존성을 줄일 수 있는 방법 제안하였으며 실험으로 검증하였다. 그리고 광필터의 공진파장과 여과 깊이는 평면도파로의 두께와 연마깊이로서 적절히 선택할 수 있음을 실험으로 보였다. 광섬유 연마과정, 폴리머 평면도파로 제작 등을 포함한 소자제작 공정을 소개하였다. 제작된 광필터의 3㏈대역폭은 15nm, 삽입손실은 0.2㏈, 편광에 따른 공진 파장의 차이는 2nm 이하였다. 그리고 주위온도에 의한 공진파장의 이동거리는 -0.35nm/$^{\circ}C$로 측정되었다.

• 한국정밀공학회지
• /
• 제23권5호
• /
• pp.59-67
• /
• 2006

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.

• 한국정보통신학회논문지
• /
• 제18권6호
• /
• pp.1401-1406
• /
• 2014

반도체소자의 제조 공정 기술 중 구리패턴을 얻기 위해서 사용하는 화학 기계적 연마(CMP)를 이용한 평탄화와 연마 공정에서 Wafer에 도포된 구리의 두께를 실시간으로 측정하여 정밀하게 제어할필요가 있는데, 이때 획득되는 센서값을 실제 두께 값으로 환산하는 계산과정에서 오차가 발생할 수 있다. 실제 측정 값에 근사한 값을 얻도록 단순평균을 이용한 방법, 이동 평균, 필터 들을 사용하여 결과를 비교하여 옹고스트롬 단위의 두께를 실시간으로 측정하는 제어 시스템의 편차를 줄이도록 하는 방법의 구현에 대해 기술한다.

• 한국정밀공학회지
• /
• 제27권1호
• /
• pp.58-63
• /
• 2010

A new contact force estimation technique is proposed. Keeping the contact force at a certain level between finishing tool and the object is essential since the quality of the finished surface is very sensitive to the contact force during the finishing process. However, the contact force measurement cannot be obtained by simply installing load cells under machine table or in the middle of tool linkage. The reason is that the weight of the machine table and the tool linkage are much heavier than the force to be measured. To that end, a method for estimating disturbance is proposed for a system that is similar to the mechanism of the finishing machine, and the same method is applied to estimate the contact force of the brush-type finishing machine. To verify the effectiveness of the proposed method, a small scale test set-up has been built and the method has been tested.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.1816-1821
• /
• 2003

The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1996년도 추계학술대회 논문집
• /
• pp.167-171
• /
• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• 한국전기전자재료학회논문지
• /
• 제28권12호
• /
• pp.776-780
• /
• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• 한국기계가공학회지
• /
• 제7권3호
• /
• pp.41-46
• /
• 2008

Generally optical components are fabricated by grinding, lapping and polishing processes. Those processes take long time to obtain optical high surface quality. In the case of large optical components, the on-machine measurement is strongly recommended because the workpiece is fragile and difficult to set up for fabricating and measuring. This paper is concerned about a swing-arm mechanism which can be used for on-machine measurement of a surface profile with a sensing probe end-effect, and also for grinding or lapping the surface with a corresponding tool. The measuring accuracy and uncertainty using a swing arm type profilometer have been studied. The experimental results show that this method is useful specially in lapping process with the accuracy of $5{\mu}m$. Those inspection data are provided for correcting the residual figuring error in next processes.