Velocity Measurements of Slurry Flows in CMP Process by Particle Image Velocimetry

Particle Image Velocimetry 기법을 이용한 CMP 공정의 Slurry유동 분석

  • 김문기 (서울대학교 기계항공공학부 대학원) ;
  • 윤영빈 (서울대학교 기계항공공학부) ;
  • 고영호 ((주)삼성전자 메모리사업부) ;
  • 홍창기 ((주)삼성전자 메모리사업부) ;
  • 신상희 (서울대학교 기계항공공학부)
  • Published : 2006.05.01

Abstract

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.

Keywords

References

  1. Doi, T., Kasai, T. and Nakagawa, T., '半導體平坦化 CMP 技術,' 株式會社 工業調査會, 1998
  2. Oliver, M. R., 'Chemical-Mechanical Planarization of Semiconductor Materials,' Springer-Verlag Berlin Heidelberg, Germany, 2004
  3. Zantye, P. B., Kumar, A. and Sikder, A. K., 'Mater. Sci. Eng. R.,' Reports, Vol. 45, pp. 89-220, 2004 https://doi.org/10.1016/j.mser.2004.06.002
  4. Runnels, S. R. and Eyman, L. M., 'Tribology Analysis of Chemical-Mechanical Polishing,' J. Electrochem. Soc., Vol. 141, pp. 1698-1701, 1994 https://doi.org/10.1149/1.2054985
  5. Park, S. S., Cho, C. H. and Ahn, Y., 'Hydrodynamic Analysis of Chemical Mechanical Polishing Process,' Tribology International, Vol. 33, pp. 723730,2000 https://doi.org/10.1016/S0301-679X(00)00114-6
  6. Thakurta, D. G, Schwendeman, D. W., Gutmann, R. J., Shankar, S., Jiang, L. and Gill, W. N., 'ThreeDimensional Wafer-Scale Copper ChemicalMechanical Planarization Model,' Thin Solid Films, Vol. 414, No.1, pp. 78-90, 2002 https://doi.org/10.1016/S0040-6090(02)00329-2
  7. Larsen-Bass, J. and Liang, H., 'Probable role of abrasion in chemo-mechanical polishing of tungsten,' Wear, Vol. 233-235, pp. 647-654, 1999 https://doi.org/10.1016/S0043-1648(99)00248-3
  8. Ahmadi, G and Xia, X., 'A model for mechanical wear and abrasive particle adhesion during the CMP process,' J. Electrochem. Soc., Vol. 148, pp. G99-G109,2001 https://doi.org/10.1149/1.1346614
  9. Zhao, Y. and Chang, L., 'A micro-contact and wear model for CMP of silicon wafers,' Wear, Vol. 252, pp 220-226, 2002 https://doi.org/10.1016/S0043-1648(01)00871-7
  10. Qin, K., Moudgil, B. and Park, C. W., 'A Chemical Mechanical polishing model incorporating both the chemical and mechanical effects,' Thin Solid Films, Vol. 446, No.2, pp. 277-286, 2004 https://doi.org/10.1016/j.tsf.2003.09.060
  11. Coppeta, J., Rogers, C., Philipossian, A. and Kaufman, F., 'A technique for measuring slurry-flow dynamics during chemical-mechanical polishing,' Mat. Res. Soc. Symp. Poc., Vol. 447, pp. 95-100, 1997
  12. Hocheng, H. and Cheng, C. Y., 'Visualized characterization of slurry film between wafer and pad during chemical mechanical planarization,' IEEE transactions on semiconductor manufacturing, Vol. 15, No. 1, pp. 45-50, 2002 https://doi.org/10.1109/66.983443
  13. Raffel, M., Willert, C. E. and Kompenhans, J., 'Particle Image Velocimetry: A Practical Guide,' Springer, 1997
  14. Tseng, W. T., Chin, J. H. and Kang, L. C., 'A Comparative Study on the Roles of Velocity in the Material Removal Rate during Chemical Mechanical Polishing,' J. Electrochem. Soc., Vol. 146, pp. 1952-1959, 1999 https://doi.org/10.1149/1.1391872
  15. Park, D. W., 'A Control Method of Removal Rate Profiles,' Samsung technical reports, Samsung Electronics