References
- Doi, T., Kasai, T. and Nakagawa, T., '半導體平坦化 CMP 技術,' 株式會社 工業調査會, 1998
- Oliver, M. R., 'Chemical-Mechanical Planarization of Semiconductor Materials,' Springer-Verlag Berlin Heidelberg, Germany, 2004
- Zantye, P. B., Kumar, A. and Sikder, A. K., 'Mater. Sci. Eng. R.,' Reports, Vol. 45, pp. 89-220, 2004 https://doi.org/10.1016/j.mser.2004.06.002
- Runnels, S. R. and Eyman, L. M., 'Tribology Analysis of Chemical-Mechanical Polishing,' J. Electrochem. Soc., Vol. 141, pp. 1698-1701, 1994 https://doi.org/10.1149/1.2054985
- Park, S. S., Cho, C. H. and Ahn, Y., 'Hydrodynamic Analysis of Chemical Mechanical Polishing Process,' Tribology International, Vol. 33, pp. 723730,2000 https://doi.org/10.1016/S0301-679X(00)00114-6
- Thakurta, D. G, Schwendeman, D. W., Gutmann, R. J., Shankar, S., Jiang, L. and Gill, W. N., 'ThreeDimensional Wafer-Scale Copper ChemicalMechanical Planarization Model,' Thin Solid Films, Vol. 414, No.1, pp. 78-90, 2002 https://doi.org/10.1016/S0040-6090(02)00329-2
- Larsen-Bass, J. and Liang, H., 'Probable role of abrasion in chemo-mechanical polishing of tungsten,' Wear, Vol. 233-235, pp. 647-654, 1999 https://doi.org/10.1016/S0043-1648(99)00248-3
- Ahmadi, G and Xia, X., 'A model for mechanical wear and abrasive particle adhesion during the CMP process,' J. Electrochem. Soc., Vol. 148, pp. G99-G109,2001 https://doi.org/10.1149/1.1346614
- Zhao, Y. and Chang, L., 'A micro-contact and wear model for CMP of silicon wafers,' Wear, Vol. 252, pp 220-226, 2002 https://doi.org/10.1016/S0043-1648(01)00871-7
- Qin, K., Moudgil, B. and Park, C. W., 'A Chemical Mechanical polishing model incorporating both the chemical and mechanical effects,' Thin Solid Films, Vol. 446, No.2, pp. 277-286, 2004 https://doi.org/10.1016/j.tsf.2003.09.060
- Coppeta, J., Rogers, C., Philipossian, A. and Kaufman, F., 'A technique for measuring slurry-flow dynamics during chemical-mechanical polishing,' Mat. Res. Soc. Symp. Poc., Vol. 447, pp. 95-100, 1997
- Hocheng, H. and Cheng, C. Y., 'Visualized characterization of slurry film between wafer and pad during chemical mechanical planarization,' IEEE transactions on semiconductor manufacturing, Vol. 15, No. 1, pp. 45-50, 2002 https://doi.org/10.1109/66.983443
- Raffel, M., Willert, C. E. and Kompenhans, J., 'Particle Image Velocimetry: A Practical Guide,' Springer, 1997
- Tseng, W. T., Chin, J. H. and Kang, L. C., 'A Comparative Study on the Roles of Velocity in the Material Removal Rate during Chemical Mechanical Polishing,' J. Electrochem. Soc., Vol. 146, pp. 1952-1959, 1999 https://doi.org/10.1149/1.1391872
- Park, D. W., 'A Control Method of Removal Rate Profiles,' Samsung technical reports, Samsung Electronics