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Velocity Measurements of Slurry Flows in CMP Process by Particle Image Velocimetry  

Kim Mun-Ki (서울대학교 기계항공공학부 대학원)
Yoon Young-Bin (서울대학교 기계항공공학부)
Koh Young-Ho ((주)삼성전자 메모리사업부)
Hong Chang-Gi ((주)삼성전자 메모리사업부)
Shin Sang-Hee (서울대학교 기계항공공학부)
Publication Information
Journal of the Korean Society for Precision Engineering / v.23, no.5, 2006 , pp. 59-67 More about this Journal
Abstract
Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some previous works show that RR is determined by production of pressure and velocity and NU is also largely affected by velocity of flowfield during CMP. This study is about the direct measurement of velocity of slurry during CMP and whole flowfield upon the non-groove pad by Particle Image Velocimetry(PIV). Typical PIV system is modified adequately for inspecting CMP and slurry flowfield is measured by changing both pad rpm and carrier rpm. We performed measurement with giving some variation in the kinds of pad. The results show that the flowfield is majorly determined not by Carrier but by Pad in the case of non-groove pad.
Keywords
Chemical Mechanical Polishing; Particle Image Velocimetry; Flowfield of Slurry; Non-Uniformity of velocity; Velocity of slurry flow;
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