• Transactions of the Korean Society of Automotive Engineers
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• v.14 no.2
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• pp.57-66
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• 2006

AA5182-polypropylene sandwich sheet was manufactured, and the mechanical properties evaluation was executed in order to identify $L{\ddot{u}}ders$ band that causes fabrication process problem and especially surface roughness. To identify formability, deformation behavior, plastic strain ratio (R-value) and pole figure were measured, and texture analysis was performed. In the case of sandwich sheet, the unstable deformation behavior has decreased. As well, for sandwich sheet, A1 skin could manage the most of load, and the elongation has improved about 45% more than that of A1 skin. The plastic strain ratio of A1 skin and sandwich panel, which indicates serration behavior, was obtained from instantaneous plastic strain ratio evaluation. Also, the planar anisotropy of sandwich sheet has decreased more than that of A1 skin. According to these results, the sandwich sheet produced lightening effect and could control unstable deformation characteristic, that is, surface roughness caused by $L{\ddot{u}}ders$ band. Furthermore, it was proved that the texture control of the rolling attachment of A1 skin is necessary to improve the formability of the sandwich panel.

• Progress in Superconductivity
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• v.3 no.1
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

• Progress in Superconductivity and Cryogenics
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• v.4 no.2
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• pp.5-10
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• 2002

Deposition condition of NiO that is one of Possible buffer layers for YBCO coated conductors was studied. NiO was deposited on textured Ni substrates by a MOCVD (metal-organic chemical vapor deposition) method. The degree of texture, and the surface roughness were analyzed by X-ray Pole figure, atomic force microscope and scanning electron microscope. The (111) and (200) textures were competitively developed , depending on an oxygen partial Pressure(PO2) and deposition temperature (Tp). The (200) textured NiO layer was deposited at Tp=450~47$0^{\circ}C$ and PO2= 1.67 Torr Out-of-Plane ($\omega$-scan) and in-plane ($\Phi$-scan) textures of the (200) NiO films were as good as 10.34$^{\circ}$ and 10.00$^{\circ}$ respectively The AFM surface roughness of NiO was in the range of 3~4.5 nm at PO2=0.91~3.34 Torr and at Tp=47$0^{\circ}C$ , and in the range of 3~13 nm at TP=450~53$0^{\circ}C$ and at PO2=1.67 Torr.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.672-679
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• 1999

This paper describes the design method of active bandpass filters which employ active impedance inverters. Several authors have reported active bandpass filters. However, the functional description of the active blocks in the filters have not been throughly studied. In this paper, the active inverter block of the bandpass filter has is analyzed in the view point of filter design. The designed 3-pole bandwidth filter has its insertion gain of 24 dB at the center frequency of 865 MHz with 75 MHz bandwidth. The noise figure of the active bandpass filter is less than 2.5 dB within its passband.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.59-63
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• 2002

The purpose of this paper is to investigate the crystal texture of the 2223 phase and its relationship with PIT processing parameter. Ag-sheathed Bi-2223 multi-filament tapes were prepared by changing rolling reduction ratio. We analysed the degree of texture for 2223 phase after heat-treatment. According to X-ray pole-figure, the texture of the filaments located near surface and center were not so different each other for all rolling conditions. we found a little higher degree of texture for 60% rolling reduction. But its difference is not so high compared with those tapes with a lower rolling reduction ratio. Reaction induced texturing seemed to contribute with a large portion under present condition.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1247-1248
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• 2006

We fabricated YBCO film using a TFA-MOD method. In order to enhance the reaction kinetics and to control the formation of the second phases, $Y_2Ba_1Cu_1O_x$ and $Ba_3Cu_5O_8$ powders were used as precursors (the so called "211 process"). The films were calcined at $460^{\circ}C$ and then fired at $750^{\circ}C-800^{\circ}C$ in a 12.1% humidified $Ar-O_2$ atmosphere. We found that the microstructure varied significantly with the firing temperature. The textures of all of the films were similar and mainly biaxial. For the film fired at $775^{\circ}C$, the critical current was obtained to be 39 A/cm-width (corresponding critical current density is 2.0 MA/$cm^2$).

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.55-58
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• 2003

We fabricated the textured Ni substrate and evaluated the effects of processing variables on microstructural evolution and texture transformation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(P/M) and plasma arc melting(PAM) The texture of the substrate was characterized by pole-figure and surface condition was evaluated by atomic force microscopy. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 800~120$0^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$~10$^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the FWHMs of in-plane texture was 9$^{\circ}$~13$^{\circ}$ at the temperature range. In addition, twin texture, (221)＜221＞, was formed as the temperature increased further. The grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Journal of Powder Materials
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• v.10 no.4
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• pp.241-248
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• 2003

Biaxially textured Ni tapes were fabricated by a cold working and recrystallization heat treatment processes from powder compact rods. The processing parameters associated with the cube texture formation in Ni tapes were systematically investigated by using X-ray diffraction and pole-figure analysis. The Ni powder used in this study was 5 $\mu$m in size and 99.99% in purity. To find the optimum sintering temperature, tensile tests were performed for Ni rods sintered at various temperatures. The Ni rods sintered at 100$0^{\circ}C$ showed poor elongation and low fracture strength, while the Wi rods sintered above 100$0^{\circ}C$ revealed good mechanical properties. The higher elongation and fracture strength of the Ni rods sintered at higher temperatures than 100$0^{\circ}C$ are attributed to the full densification of the sintered rods. The sintered Ni rods were cold-rolled with 5% reduction to the final thickness of 100 $\mu$m and then annealed for development of rube texture in rolled Ni tapes. The annealed Ni tapes depicted strong cube texture with FWHM(full-width at half-maximum) of in-plane and out-of-plane in the range of 8$^{\circ}$ to 10$^{\circ}$. The NiO deposited on the Ni tapes by MOCVD process showed good epitaxy with FWHM=10$^{\circ}$, which indicates that the Ni tapes can be used as a substrate for YBCO coated conductors.

• Applied Microscopy
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• v.45 no.3
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• pp.170-176
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• 2015

In this work, various electron microscopy and analysis techniques were used to investigate the microstructural evolution of a 9% Cr tempered martensite ferritic (TMF) steel T91 upon ultrasonic nanocrystalline surface modification (UNSM) treatment. The micro-dimpled surface was analyzed by scanning electron microscopy. The characteristics of plastic deformation and gradient microstructure of the UNSM treated specimens were clearly revealed by crystal orientation mapping of electron backscatter diffraction (EBSD), with flexible use of the inverse pole figure, image quality, and grain boundary misorientation images. Transmission electron microscope (TEM) observation of the specimens at different depths showed the formation of dislocations, dense dislocation walls, subgrains, and grains in the lower, middle, upper, and top layers of the treated specimens. Refinement of the $M_{23}C_6$ precipitates was also observed, the size and the number density of which were found to decrease as depth from the top surface decreased. The complex microstructure and microstructural evolution of the TMF steel samples upon the UNSM treatment were well-characterized by combined use of EBSD and TEM techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.