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Deposition condition of NiO deposited on biaxially textured Ni by a MOCVD process  

선종원 (충남대학교 금속공학과)
김형섭 (충남대학교 금속공학부)
지봉기 (성균관대학교 신소재공학과)
박해웅 (한국기술교육대학교 신소재공학과)
홍계원 (한국산업기술대학교 에너지대학원)
박순동 (한국원자력연구소)
정충환 (한국원자력연구소)
전병혁 (한국원자력연구소)
김찬중 (한국원자력연구소)
Publication Information
Progress in Superconductivity and Cryogenics / v.4, no.2, 2002 , pp. 5-10 More about this Journal
Abstract
Deposition condition of NiO that is one of Possible buffer layers for YBCO coated conductors was studied. NiO was deposited on textured Ni substrates by a MOCVD (metal-organic chemical vapor deposition) method. The degree of texture, and the surface roughness were analyzed by X-ray Pole figure, atomic force microscope and scanning electron microscope. The (111) and (200) textures were competitively developed , depending on an oxygen partial Pressure(PO2) and deposition temperature (Tp). The (200) textured NiO layer was deposited at Tp=450~47$0^{\circ}C$ and PO2= 1.67 Torr Out-of-Plane ($\omega$-scan) and in-plane ($\Phi$-scan) textures of the (200) NiO films were as good as 10.34$^{\circ}$ and 10.00$^{\circ}$ respectively The AFM surface roughness of NiO was in the range of 3~4.5 nm at PO2=0.91~3.34 Torr and at Tp=47$0^{\circ}C$ , and in the range of 3~13 nm at TP=450~53$0^{\circ}C$ and at PO2=1.67 Torr.
Keywords
NiO; MOCVD;
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Times Cited By KSCI : 1  (Citation Analysis)
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