Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2000.02a
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- Pages.122-122
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- 2000
Vapor Phase Epitaxy of Magnesium Oxide on Si(001) Using a Single Precursor
- Lee, Sun-Sook (Advanced Materials Division Korea Research Institute of Chemical Technology) ;
- Lee, Sung-Yong (Advanced Materials Division Korea Research Institute of Chemical Technology) ;
- Kim, Chang G. (Advanced Materials Division Korea Research Institute of Chemical Technology) ;
- Lee, Sang-Heon (Advanced Materials Division Korea Research Institute of Chemical Technology) ;
- Nah, Eun-Ju (Advanced Materials Division Korea Research Institute of Chemical Technology) ;
- Kim, Yunsoo (Advanced Materials Division Korea Research Institute of Chemical Technology)
- Published : 2000.02.01
Abstract
Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80
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