• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1007-1010
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• 2004

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.141-144
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• 2004

A QVGA active-matrix backplane is produced on a 25${\mu}m$ thin plastic substrate. A 4-mask photolithographic process is used. The insulator layer and the semiconductor layer are organic material processed from solution. This backplane is combined with the electrophoretic display effect supplied by SiPix and E ink, resulting in an electronic paper display with a thickness of only 100${\mu}m$. This is world's thinnest active-matrix display ever made.

• Polymer(Korea)
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• v.30 no.2
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• pp.140-145
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• 2006

The mort commonly available substrate material is glass in the display fibrication process. However, glass is not desirable due to its heaviness and fragility. Recently, plastics such polysulfone (PSF), polyethesulfone (PES), polycarbonate (PC), polyethylene terephthalate (PET) and cyclic olefin polymers (COP) have been investigated to replace glass as a substrate material for display fibrication. Plastic substrates are advantageous in that they are lightweight, huh impart resistance, flexibility, and ability for roll to roll manufacturing process. But many plastics have poor chemical resistance in organic solvent. The chemica resistance is also lequired because they are exposed to solvents for various chemical treatments din the manufacturing process. So, we have an interest in the chemical modification of PSF to improve chemical resistance. We introduced crosslinkable imide moieties using chloromethylation method for the modification of PSF which could be overcome above shortcomings for display substrate based on plastic film. We prepared the cross-linked polysulfone films which were represented chemical resistance in HeOH, THF, DMSO and NMP. The thermal properties were measured by TGA, DSC and TMA. As the results, we have confirmed to enhance of the thermal property. They had low coefficient of thermal expansion (CTE) which decreased to 15% and had increased $T_g\;from\;180^{\circ}C\;to\;252^{\circ}C$. Cross-linked polysulfone films with imide side-chain had good optical properties and chemical resistance so that they could be used as flexible display substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.309-313
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• 2006

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.655-656
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• 2005

In the future, plastic based system will play a crucial role in modem life, for examples, transparent display or disposable electronics and so on. In this paper, we introduced a new method to fabricate the metal line on the plastic substrate. Metal lines were fabricated by hot embossing and CMP process on PMMA (polymethylmethacrylate) substrates. A Si mold was made by wet etching process and a PMMA wafer was cut off from I mm thick PMMA sheet. A 100 nm thick Al was deposited on PMMA wafers. The Al deposited PMMA wafer and the Si mold carefully sandwiched which was directly imprinted by hot embossing. After imprinting process, a residual Al layer was removed by CMP process. Finally, we found the entire process may be very useful to fabricate the metal line on plastic substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1722-1725
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• 2007

We will discuss and compare the different ways to manufacture high performance Barix coated barrier films as a substrate for displays: R2R vs Batch. It will be shown that the barrier performance of the Barix coating on plastic can be as good as on glass substrates. More then 1000 hrs of testing at 60C/90RH can be passed without degradation of Ca samples

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.181-185
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• 2006

The flexible 2-inch AMOLED with $176{\times}144$ pixels has been demonstrated using top emission OLED driven by organic thin film transistors (OTFTs). For the development of AMOLED display on plastic substrate, we have developed several integration and unit process technologies. Through the optimization of the process based on plastic substrate, OTFT backplane with 2 transistors and 1 capacitor in a pixel has been fabricated and integrated with top emission OLED. The active addressing by OTFT driving circuit has been achieved and green light with 15 $cd/m^2$ at 15V has been observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1466-1469
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• 2008

We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of $5.4\;cm^2/V.s$, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of $1.7{\times}10^9$. Although whole process temperature is below $150^{\circ}C$ to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.957-961
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• 2004

In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.338-341
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• 2005

We have examined the aspects of the orientational ordering deformation of ferroelectric liquid crystal during bending performance of plastic substrate by analyzing the polarizing optical microscope texture and the birefringence of the cell. Striped texture becomes more prominent as the radius of curvature of substrate gets smaller. The optic axis of the adjacent stripes domain was not same and the relative angle between them becomes larger as the radius of curvature gets smaller. Especially, the optic axis rotation angle of one domain was lager than the other and the liquid crystal molecules in each domain became more coherent. In addition, the birefringence data with obliquely incident light shows the polar direction shift of liquid crystal molecule by bending performance.