• Laser Solutions
• /
• v.6 no.2
• /
• pp.27-33
• /
• 2003

A laser shock cleaning technology is a new dry cleaning methodology for the effective removal of small particles from the surface. This technique uses a plasma shock wave produced by a breakdown of air due to an intense laser pulse. In order to optimize the laser shock cleaning process, it needs to evaluate the cleaning performance quantitatively by using a monitoring technique. In this paper, an acoustic monitoring technique was attempted to investigate the laser shock cleaning process with an aim to optimize the cleaning process. A wide-band microphone with high sensitivity was utilized to detect acoustic signals during the cleaning process. It was found that the intensity of the shock wave was strongly dependent on the power density of laser beam and the gas species at the laser beam focus. As a power density was larger, the shock wave became stronger. It was also seen that the shock wave became stronger in the case of Ar gas compared with air and N$_2$ gas.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.152-155
• /
• 2013

$TiO_2$ films were deposited on glass substrates with and without $O_2$ plasma etching by using the RF-magnetron sputtering method. We focused on the effect of surface structure on the photoinduced hydrophilic properties of $TiO_2$ films, fabricated on different surface conditions according to the presence or absence of the $O_2$ plasma treatment on glass substrates. The wettability and photoinduced hydrophilic properties of the $TiO_2$ films were investigated according to the changes in water contact angles under UV light irradiations with a very low intensity of 0.1 $mW/cm^2$. The photoinduced hydrophilic properties on the $TiO_2$ formed above the plasma treated glass were also superior to those on the $TiO_2$ formed above the bare glass. This enhanced $TiO_2$ film has been used practically for self cleaning and anti-fogging glasses.

• Korean Journal of Materials Research
• /
• v.16 no.2
• /
• pp.80-84
• /
• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.1
• /
• pp.32-37
• /
• 2011

Numerical analysis is done to investigate the effect of surface treatment of a toilet on the cleanness. The surface treatment using plasma for the super-hydrophobic surface expects the self-cleaning effect of the toilet seat cover for preventing the droplets with a great quantity of bacteria during the toilet flushing after evacuation. In this study, the fluid analysis in the toilet during the flushing was performed by an ultrahigh-speed CCD camera with 1,000 frame/sec and the numerical modeling. And the spattering phenomenon from the toilet surface during urine was analyzed quantitatively by CFD-ACE+ with a free surface model and a mixed model of two fluids. If the surface tension of the toilet surface is weak, many urine droplets after collision bounded in spite of considering the gravity. The turbulence generated by the change of angle and velocity of urine and the variation of the collision phenomenon from toilet surface were modeled numerically.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.20 no.3
• /
• pp.135-140
• /
• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.5
• /
• pp.208-215
• /
• 2009

We employed atmospheric plasma to reactively remove the lubricant sprayed onto such industrial electronic parts as LCD chassis during sheet-metal forming processes and investigated basically the effect of plasma parameters on cleansing the surfaces of zinc-electroplated steel plates (EGI). Specimen prepared with some controlled amount of lubricant sprayed on their surfaces beforehand were subjected to two different kinds of atmospheric plasma, one being generated by using air and the other generated by using nitrogen (99.9% purity). Locating the plasma beams at the height range between 3.5 and 13.5 mm from the surface of each specimen and radiating for 5 to 30 seconds resulted out that the cases with a position of 3.5 mm and a duration of 5 seconds or longer showed the surfaces completely cleansed without a trace of lubricant. Furthermore we found out that the plasma generated by using simple air depicted higher cleansing ability than the other one generated by using expensive nitrogen, interestingly useful very much for industrial purposes. On another aspect, we confirmed that the drilled or cut surfaces of Zn-plated steel substrate would not be oxidized even under the influence of plasma during its cleansing process. Therefore, we could probably conclude from this fore-survey that a dry process adopting atmospheric plasma for cleansing industrial parts might be determined to become successful in terms of commercialization, cautiously.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2005.11a
• /
• pp.151-151
• /
• 2005

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.2
• /
• pp.77-83
• /
• 2013

In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.1-6
• /
• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• Journal of the Semiconductor & Display Technology
• /
• v.8 no.2
• /
• pp.15-21
• /
• 2009

Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.