• Title/Summary/Keyword: plasma ion

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Corrosion Characteristics of Cast Stainless Steel under Plasma Ion Nitriding Process Temperature in Marine Environment (주조 스테인리스강의 해양환경 하에서 플라즈마 이온질화 공정온도에 따른 부식특성 연구)

  • Chong, Sang-Ok;Kim, Seong-Jong
    • Journal of the Korean institute of surface engineering
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    • v.50 no.6
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    • pp.504-509
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    • 2017
  • In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.

A Study on the Sputtering System Using Ion Plating Technique (이온 플레이팅 응용 스퍼터링 장치에 관한 연구)

  • Jeong, Yeon-Ho;Choi, Young-Wook
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2179-2183
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    • 2007
  • In this paper, to produce sheet plasma with high density for ion plating, we designed magnetic circuit of ion plating device consisting of solenoid coil and rectangular permanent magnet. And, we analyzed the effects of the magnetic field distribution using FEM (Finite Element Methode). Additionally, we made a sputtering system including ion plating technique on the basis of the design and verified the possibility of the sheet plasma application for advanced sputter system.

Scanning System Method for Calculating Ion Flux in Plasma Etching Simulation (플라즈마 식각 시뮬레이션을 위한 스캔 방식의 이온 플럭스 계산 방법)

  • Shin, Sung-Sik;Yu, Dong-Hun;Gwun, Ou-Bong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.10
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    • pp.124-131
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    • 2013
  • The most important thing in Plasma simulation is the etching process in which etch rate is calculated based on feature profile. Although there are various components to consider in calculating etch rate such as Ion Flux, Neutral, gas, and temperature, Addressing of this paper is limited to Ion Flux. This paper propose a scan method to compute Ion Flux faster for Plasma simulation. Also, this paper experiments and compares generally used Monte Carlo method and the proposed method based on gaussian and cosine distribution. Lastly, this paper proves that the proposed method can calculate accurate Ion Flux more efficiently than Monte Carlo method.

Development of High Flux Metal Ion Plasma Source for the Ion Implantation and Deposition

  • Kim, Do-Yun;Lee, Eui-Wan
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.45-56
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    • 2003
  • A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

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QMF Ion Beam System Development for Oxide Etching Mechanism Study (산화막 식각 기구 연구를 위한 QMF Ion Beam 장치의 제작)

  • 주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.4
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    • pp.220-225
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    • 2004
  • A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$#/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

Measurement of ion-induced secondary electron emission coefficient for MgO thin film with $O_{2}$ plasma treatment

  • Jeong, H.S.;Oh, J.S.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.802-805
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    • 2003
  • The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

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PLASMA SOURCE ION IMPLANTATION OF NITROGEN AND CARBON IONS INTO CO-CEMENTED WC

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Kim, Hai-Dong;Kim, Gon-Ho;Kim, Yeong-Woo;Cho, Jung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.220-220
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    • 1999
  • In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

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Measurement of fast ion life time using neutron diagnostics and its application to the fast ion instability at ELM suppressed KSTAR plasma by RMP

  • Kwak, Jong-Gu;Woo, M.H.;Rhee, T.
    • Nuclear Engineering and Technology
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    • v.51 no.7
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    • pp.1860-1865
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    • 2019
  • The confinement degradation of the energetic particles during RMP would be a key issue in success of realizing the successful energy production using fusion plasma, because a 3.5 MeV energetic alpha particle should be able to sustain the burning plasma after the ignition. As KSTAR recent results indicate the generation of high-performance plasma(${\beta}_p{\sim}3$), the confinement of the energetic particles is also an important key aspect in neutral beam driven plasma. In general, the measured absolute value of the neutron intensity is generally used for to estimating the confinement time of energetic particles by comparing it with the theoretical value based on transport calculations. However, the availability of, but for its calculation process, many accurate diagnostic data of plasma parameters such as thermal and incident fast ion density, are essential to the calculation process. In this paper, the time evolution of the neutron signal from an He3 counter during the beam blank has permitted to facilitate the estimation of the slowing down time of energetic particles and the method is applied to investigate the fast ion effect on ELM suppressed KSTAR plasma which is heated by high energy deuterium neutral beams.

Tool Wear Characteristics of Tungsten Carbide Implanted with Plasma Source Nitrogen Ions in High-speed Machining (플라즈마 질소 이온 주입한 초경공구의 고속가공시 공구마멸 특성)

  • Park, Sung-Ho;Wang, Duck Hyun
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.21 no.5
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    • pp.34-39
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    • 2022
  • The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

Oxygen Plasma Characterization Analysis for Plasma Etch Process

  • Park, Jin-Su;Hong, Sang-Jeen
    • Journal of the Speleological Society of Korea
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    • no.78
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    • pp.29-31
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    • 2007
  • This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.