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http://dx.doi.org/10.5573/ieek.2013.50.10.124

Scanning System Method for Calculating Ion Flux in Plasma Etching Simulation  

Shin, Sung-Sik (Division of Computer Science and Engineering, Chonbuk National University)
Yu, Dong-Hun (Chemical Engineering and Technology, Chonbuk National University)
Gwun, Ou-Bong (Division of Computer Science and Engineering, Chonbuk National University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.10, 2013 , pp. 124-131 More about this Journal
Abstract
The most important thing in Plasma simulation is the etching process in which etch rate is calculated based on feature profile. Although there are various components to consider in calculating etch rate such as Ion Flux, Neutral, gas, and temperature, Addressing of this paper is limited to Ion Flux. This paper propose a scan method to compute Ion Flux faster for Plasma simulation. Also, this paper experiments and compares generally used Monte Carlo method and the proposed method based on gaussian and cosine distribution. Lastly, this paper proves that the proposed method can calculate accurate Ion Flux more efficiently than Monte Carlo method.
Keywords
Ion Flux; Etching Process; Scan Method; Plasma Simulation; Monte Carlo Method;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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