• Title/Summary/Keyword: planar mode

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Partial EBG Structure with DeCap for Ultra-wideband Suppression of Simultaneous Switching Noise in a High-Speed System

  • Kwon, Jong-Hwa;Kwak, Sang-Il;Sim, Dong-Uk;Yook, Jong-Gwan
    • ETRI Journal
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    • v.32 no.2
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    • pp.265-272
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    • 2010
  • To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.

Design and Manufacture of X-Band 10 X 10 Waveguide Slot Array Antenna for SAR (SAR용 X-밴드 10 10도파관 슬롯 배열 안테나 설계 및 제작)

  • 신영종;이범선
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.11
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    • pp.1019-1025
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    • 2004
  • The X-band 10${\times}$10 waveguide slot array antenna for SAR is designed, fabricated and measured. The array antenna is designed using the equivalent circuit model based on the field distribution of the dominant mode, TE$\sub$10/, and EM simulation. The method to decide optimum angle of the centered inclined slot(coupling slot) and the optimum of offset of the longitudinal slot(radiating slot) is provided. The designed antenna structure is EM simulated and fabricated. The measured return loss bandwidth is 180 MHz at 9.15 GHz , the side lobe level is below -25 dB, HPBW is about 9$^{\circ}$, and the gain is 25.5 dB. These results are similar to the simulation data.

The Short Channel Effect Immunity of Silicon Nanowire SONOS Flash Memory Using TCAD Simulation

  • Yang, Seung-Dong;Oh, Jae-Sub;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Lee, Sang Youl;Lee, Hi-Deok;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.3
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    • pp.139-142
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    • 2013
  • Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage ($V_T$) shift of 2.5 V in 1ms using a gate pulse of +14 V. The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, which becomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation as the nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction area is significantly reduced in the SiNW structure.

Design, Fabrication and Measurement of a Compact, Frequency Reconfigurable, Modified T-shape Planar Antenna for Portable Applications

  • Iqbal, Amjad;Ullah, Sadiq;Naeem, Umair;Basir, Abdul;Ali, Usman
    • Journal of Electrical Engineering and Technology
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    • v.12 no.4
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    • pp.1611-1618
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    • 2017
  • This paper presents a compact reconfigurable printed monopole antenna, operating in three different frequency bands (2.45 GHz, 3 GHz and 5.2 GHz), depending upon the state of the lumped element switch. The proposed multiband reconfigurable antenna is designed and fabricated on a 1.6 mm thicker FR-4 substrate having a relative permittivity of 4.4. When the switch is turned ON, the antenna operates in a dual band frequency mode, i.e. WiFi at 2.45 GHz (2.06-3.14 GHz) and WLAN at 5.4 GHz (5.11-5.66 GHz). When the switch is turned OFF, it operates only at 3 GHz (2.44-3.66 GHz). The antenna radiates omni-directionally in these bands with an adequate, bandwidth (>10 %), efficiency (>90 %), gain (>1.2 dB), directivity (>1.7 dBi) and VSWR (<2). The fabricated antenna is tested in the laboratory to validate the simulated results. The antenna, due to its reasonably compact size ($39{\times}37mm^2$), can be used in portable devices such as laptops and iPads.

Vibration mitigation of guyed masts via tuned pendulum dampers

  • Lacarbonara, Walter;Ballerini, Stefano
    • Structural Engineering and Mechanics
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    • v.32 no.4
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    • pp.517-529
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    • 2009
  • A passive vibration mitigation architecture is proposed to damp transverse vibrations of guyed masts. The scheme is based on a number of pendula attached to the mast and tuned to the vibration modes to be controlled. This scheme differs from the well-known autoparametric pendulum absorber system. The equations of motion of the guyed mast with an arbitrary number of pendula are obtained. The leading bending behaviour of a typical truss mast is described by an equivalent beam model whereas the guys are conveniently modeled as equivalent transverse springs whose stiffness comprises the elastic and geometric stiffness. By assuming a mast with an inertially and elastically isotropic cross-section, a planar model of the guyed mast is investigated. The linearization of the equations of motion of the mast subject to a harmonic distributed force leads to the transfer functions of the structure without the dampers and with the dampers. The transfer functions allow to investigate the mitigation effects of the pendula. By employing one pendulum only, tuned to the frequency of the lowest mode, the effectiveness of the passive vibration potential in reducing the motion and acceleration of the top section of the mast is demonstrated.

Module of Carbon Nanotubes Backlight

  • Chou, Lin-En;Lin, Biing-Nan;Jiang, Yau-Chen;Tsou, Te-Hao;Fu, Chuan-Hsu;Hsiao, Ming-Chun;Chang, Yu-Yang;Lin, Wei-Yi;Lin, Ming-Hung;Lee, Cheng-Chung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.150-155
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    • 2006
  • Carbon nanotubes backlight unit (CNT-BLU) that lightened by field emission was developed into practicability. According to our novel structure, AC mode circuit design and simple printing process, CNT-BLU could achieve 85% of uniformity, 8000 nits of brightness and low material and fabrication cost. Based on these performances, this new planar backlight technology has chances to proceed to mass production and has the potential to replace traditional backlight technology because of its good properties, like the simple processes, easy to large scale, low surface temperature, low power consumption, optical film-free and Hg-free, etc.

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Development of 900 V Class MOSFET for Industrial Power Modules (산업 파워 모듈용 900 V MOSFET 개발)

  • Chung, Hunsuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.109-113
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    • 2020
  • A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower RDS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

Novel Optical Properties of Si Nanowire Arrays

  • Lee, Munhee;Gwon, Minji;Cho, Yunae;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.179.1-179.1
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    • 2014
  • Si nanowires have exhibited unique optical characteristics, including nano-antenna effects due to the guided mode resonance, significant optical absorption enhancement in wide wavelength and incident angle range due to resonant optical modes, graded refractive index, and scattering. Since Si poor optical absorption coefficient due to indirect bandgap, all such properties have stimulated proposal of new optoelectronic devices whose performance can surpass that of conventional planar devices. We have carried out finite-difference time-domain simulation studies to design optimal Si nanowire array for solar cell applications. Optical reflectance, transmission, and absorption can be calculated for nanowire arrays with various diameter, length, and period. From the absorption, maximum achievable photocurrent can be estimated. In real devices, serious recombination loss occurring at the surface states is known to limit the photovoltaic performance of the nanowire-based solar cells. In order to address such issue, we will discuss how the geometric parameters of the array can influence the spatial distribution of the optical field (resulting optical generation rate) in the nanowires.

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Characteristics and Applications of the Tapered Feedline with Strong Coupling (강한 결합성을 갖는 테이퍼 라인을 이용한 공진기 급전선의 특성 및 응용)

  • 한상민;최준호;김영식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.8
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    • pp.878-883
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    • 2003
  • New feeding structures using linearly and exponentially tapered lines to planar microstrip resonators are proposed. These can overcome the design problems from coupling losses and impedance mismatching by increasing the coupling efficiency. The variation of its feeding angle is evaluated for the insertion loss and bandwidth and the feedline length is optimized at ${\lambda}_g$/2. The ring resonators and patches fed by the tapered line have been designed and implemented. The experimental results show that the insertion loss is enhanced by about 7 dB. Both rings and antennas are better matched, without disturbing the single-mode resonance or distorting their radiation pattern

Direction of Intercalation of a bis-Ru(II) Complex to DNA Probed by a Minor Groove Binding Molecule 4',6-Diamidino-2-phenylindole

  • Jang, Yoon Jung;Kim, Raeyeong;Chitrapriya, Nataraj;Han, Sung Wook;Kim, Seog K.;Bae, Inho
    • Bulletin of the Korean Chemical Society
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    • v.34 no.10
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    • pp.2895-2899
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    • 2013
  • Direction of intercalation to DNA of the planar dipyrido[3,2-a:2',3'-c]phenazine ligands (dppz) of a bis-Ru(II) complex namely, $[Ru(1,10-phenanthroline)_2dipyrido[3,2-a:2^{\prime},3^{\prime}-c]phenazine]^{2+}$ linkered by a 1,3-bis(4-pyridyl)propane, was investigated by probing the behavior of 4',6-diamidino-2-phenylindole (DAPI) that bound deep in the minor groove. Bis-intercalation of DPPZ resulted in a little blue shift and hyperchromism in DAPI absorption band, and a large decrease in DAPI fluorescence intensity which accompined by an increase in the dppz emission intensity. Diminishing the intenisty of the positive induced circular dichroism (CD) and linear dichroism (LD) were also observed. These spectral changes indicated that insertion of dppz ligand caused the change of the binding mode of DAPI, which probably moved to the exterior of DNA from the minor groove and interacted with the phospghate groups of DNA by electrostatic interaction. At the surface of DNA, DAPI binds at the phosphate groups of DNA by electrostatic attraction. Consequently, this observation indicated that the dppz ligand intercalated from the minor groove.