• Journal of Magnetics
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• 제6권2호
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• pp.73-76
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• 2001

A double rectangular spiral type inductor has been fabricated by using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of the upper magnetic films over the coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance: inductance of 1.1 $\mu H$, Q factor of 7 (at 5 MHz), and the current capability up to 100 mA.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.532-538
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• 2000

A double rectangular spiral inductor is fabricated using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of upper magnetic films over coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance : inductance of 1.1 H, Q factor of 7 (at 5 MHz), and the dc current capability up to 100 mA.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1106-1107
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• 2007

Planar magnetic based design technologies have been widely applied to power design for better cooling and ease of fabrication. The planar transformer and the planar inductor have a low profile characteristics compare to the conventional transformer which would be more cubical in volume. High frequency operation of magnetic components is a main key to achieve high power density of the power module. However, at a high frequency, the skin effect and the proximity effect have to be considered very significantly in magnetic design and also the parasitics in the converter cannot be ignored. This paper deals with the design and the experiment of planar integrated magnetic component. The optimal design for planar magnetics is summarized.

• Journal of information and communication convergence engineering
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• 제4권2호
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• pp.88-91
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.255-258
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• 2006

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the $S_{11}-parameter$ of the inductor.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권10호
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• pp.534-539
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• 2006

An integrated inductor using the low-temperature co-fired ceramics(LTCC) technology for low-power electronics was fabricated. In the inductor NiZn ferrite sheet$({\mu}_r=230)$, was embedded to increase inductance. The inductor has Ag spiral coil with 14 turns$(7turns{\times}2layers)$, a dimension of 0.6mm in width, 10um in thickness, and 0.15mm pitch. To evaluate the inductance, including the parasitic resistance, the fabricated inductor was calculated and measured. It was confirmed that calculated values were very close to the measured values. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC boost DC/DC converter with 1W output power and up to 0.5MHz switching frequency using the inductor fabricated was developed.

• 한국산학기술학회논문지
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• 제15권4호
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• pp.2330-2334
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• 2014

본 논문에서는 무선 신호전송을 위한 비접촉 방식의 AC커플링(Coupling)기반 평면 나선형 인덕터의 주파수 특성을 분석하였다. 기판의 유전상수의 변화는 소자의 인덕턴스에 직접적인 영향을 주지 않고 소자의 전기용량에 영향을 주어 공진주파수를 변화시키는 것을 알 수 있다. 기판의 두께가 증가할수록 인덕턴스는 증가하지만 공진주파수는 감소하였으며, 이것은 기판 두께의 감소로 인해 내부 전기용량이 증가하였기 때문이다. 인덕터의 도체 선 폭이 증가하여도 전체 인덕터 크기와 턴 수 및 선 간격이 일정함으로 내부 사각 코일의 도선 면적이 작아지게 되어 각각의 자기 인덕턴스가 감소하게 되고 공진주파수는 증가되게 된다. 또한, 도체의 선 간격이 증가하면 내부 사각 코일의 도선 면적이 작아지게 된다.

• 한국전자파학회논문지
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• 제19권2호
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• pp.257-262
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• 2008

본 논문에서는 열전도도가 우수한 AIN 기판에 $CO_2$ Laser 장비 를 이용하여 Thru-hole과 scribing line을 형성하기 위해 $CO_2$ laser의 파라미터(촛점 거리, 공기량, 레이저 빔 시간, 펄스 개수)를 실험하고, 자체 정렬 마스킹 기법을 이용한 5 um 두께의 Cu 도금으로 AIN 기판에 전송 선로와 나선형 평면 인덕터를 제작하였다. AIN 기판에서의 마이크로스트립 라인의 전송 손실은 10 GHz에서 0.1 dB/mm, 6 nH 나선형 평면 인덕터는 1 GHz에서 56의 품질 계수를 얻었고, 이를 통해 열전도도가 우수한 AIN 기판의 고전력 RF 응용이 가능할 것으로 기대한다.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• IEIE Transactions on Smart Processing and Computing
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• 제4권3호
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• pp.158-162
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• 2015

A low phase noise CMOS voltage controlled oscillator(VCO) for multi-band/multi-standard RF Transceivers is presented. For both wide tunability and low phase noise characteristics, Hybrid inductor which uses both bondwire inductor and planar spiral inductor in the same area, is proposed. This approach reduces inductance variation and presents high quality factor without custom-designed single-turn inductor occupying large area, which improves phase noise and tuning range characteristics without additional area loss. An LC VCO is designed in a 0.13um CMOS technology to demonstrate the hybrid inductor concept. The measured phase noise is -121dBc/Hz at 400KHz offset and -142dBc/Hz at 3MHz offset from a 900MHz carrier frequency after divider. The tuning range of about 28%(3.15 to 4.18GHz) is measured. The VCO consumes 7.5mA from 1.3V supply and meets the requirements for GSM/EDGE and WCDMA standard.