• 전자공학회논문지D
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• 제35D권5호
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• 센서학회지
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• 제20권6호
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• pp.393-399
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• 2011

In this paper, we designed and fabricated the novel air flow sensor using air drag force, which can be applied to the low air flow detection. To measure the low air flow, we should enlarge the air drag force and the output signal at the given air flow. The paddle structure is applied to the device, and the device is vertically located against the air flow to magnify the air drag force. We also adapt the corrugation structure to improve the output signals on the given air velocity. The device structure is made up of the silicon nitride layer and the output signal is measured with the piezoresistive layer. The output signals from the corrugated device show the better measurement sensitivity and the response time than that of flat one. The repeated measurement also shows the stabilized signals.

• 동력기계공학회지
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• 제5권4호
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1229-1230
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• 2015

Monitoring of mechanical properties of tissues as well as direction/quantities of forces is considered as an essential way for disease diagnosis and haptic feedback systems. There are extensively increasing interests for measuring normal/shear force and touch feelings, especially for surgery systems. Highly sensitive and flexible tactile sensor is needed in palpation for detecting cancer cyst as well as real time pressure monitoring in minimally invasive surgery (MIS). Importantly, MEMS technique with miniaturized fabrication technique is essential for the on-chip integration with biopsy and biomedical grasper. Here, we propose the flexible tactile sensor with high sensitivity based on piezoresistive effect. We analyzed the sensitivity according to the pressure and directions and showed the ability of discrimination of the different materials surfaces, illustrating the feasibility of the flexible tactile sensor for biomedical grasper by mimicking human skin.

• 센서학회지
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• 제22권5호
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• pp.321-326
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• 2013

In this paper, the usability of a compact silicon strain gauge load cell in a weighting disdrometer for measuring the impact load of a falling raindrop is introduced for application in a multi-meteorological sensor. The silicon strain gauge load cell is based on the piezoresistive effect, which has a high linearity output from the momentum of the raindrop and the simplicity of signal processing. The weighting disdrometer shows a high sensitivity of 7.8 mV/g in static load measurement when the diaphragm thickness of the load cell is $250{\mu}m$.

• 센서학회지
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• 제8권5호
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• pp.400-406
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• 1999

(100), n/$n^+$/n 3층 실리콘 웨이퍼를 이용하여 4가지 형태의 미소 빔 구조를 가지는 압저항형 유체센서를 제작하고, 그 특성을 조사하였다. Boron 확산을 통하여 압저항을 형성하였으며 형성된 압저항의 저항 값은 $1\;k{\Omega}$ 정도였다. 다공질 실리콘 마이크로머시닝을 이용하여 3차원의 실리콘 미소 빔 구조체를 제작하였으며, 실리콘과 금속의 열팽창계수 차이를 이용하여 빔을 위로 휘게 하여 원하는 형상으로 제조하였다. 제조된 센서의 출력 특성은 half-bridge를 구성하여 조사하였다. 같은 유속에서는 빔의 길이에 비례하여 출력 전압이 증가함을 보였고, 반면에 빔의 길이가 짧을수록 측정 가능 구간이 넓게 나타났다. 제조된 센서의 출력전압은 유량의 3.2승에 비례하여 증가하였으며, 이는 유속에 따른 빔이 받는 응력이 비 선형 특성을 나타내기 때문이다.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• 센서학회지
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• 제7권3호
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• pp.171-178
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• 1998

SDB 웨이퍼를 이용하여 실리콘 압저항형 절대압센서를 제조하고 이를 가스누출 감지시스템에 응용하였다. 이 경우 센서는 $0{\sim}600\;mmH_{2}O$, $0{\sim}100^{\circ}C$의 압력, 온도범위에서 정상적으로 동작하여야 하고 다이아프램이 파괴되었을 때 가스가 소자 외부로 누출되어서는 안된다. 따라서 다이아프램 내의 공극을 유리(Pyrex7740)와 진공중($10^{-4}$ torr)에서 양극 접합을 행하였다. 제조된 센서는 압력에 대하여 우수한 선형특성을 보였고, 압력감도는 대기압이상 $0{\sim}600\;mmH_{2}O$의 압력범위에서 $4.06{\mu}V/VmmH_{2}O$ 이었다. 온도보상 일체화 조건을 조사하기 위해 Al 박막저항을 제조하여 온도보상을 행하였는데 오프셋의 온도 drift는 80 %이상, 감도의 온도의존성은 95 %이상 보강 효과를 얻었다. 또한 다이오드(PXIN4001)를 이용한 온도보상시 오프셋의 온도 drift는 98 %이상, 감도의 온도의존성은 90%이상 보상 효과를 나타내었다.

• 마이크로전자및패키징학회지
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• 제25권1호
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• pp.35-40
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• 2018

Nd:YAG Laser를 이용하여 polyimide film에 탄화(carbonization)를 진행하여 Carbon을 생성하여 저가의 센서를 간단한 제조과정으로 만들었다. 이를 통하여 유연한 저가형 압저항 센서의 특성에 관한 연구를 수행하였다. 기존에 많은 연구들이 Polyimide에 $10.6{\mu}m$의 파장을 가지는 $CO_2$ laser를 이용하여 carbonization을 하여 센서를 제작하였다. 본 논문에서는 polyimide film에 $1.064{\mu}m$의 파장을 가지는Nd:YAG laser를 이용하여 carbonization(탄화공정)을 진행하였다. 또한 Nd:YAG laser를 사용하여 polyimide film위에 직접 탄화시키며 carbon을 생성하는 최적의 전력밀도($W/cm^2$)과 속도(scan rate) 조건 조합을 찾아 해상도를 높였다. $CO_2$ laser를 사용하였던 기존의 선행연구에서는 carbon생성의 최소 선폭이 $140{\sim}220{\mu}m$의 길이를 가졌지만, 본 연구에서는 카본의 생성되는 선폭이 $35{\sim}40{\mu}m$으로 축소시켰다. 이번 연구에서 제작된 센서의 초기 면저항은 $100{\sim}300{\Omega}/{\square}$ 이였다. 곡률 반경 21 R 로 인장을 하였을 때 저항이 30% 줄어들었고, 이를 통하여 계산된 게이지 팩터는 56.6이였다. 본 연구는 압저항 센서를 제조하기 위한 단순하고, 매우 유연하고 저렴한 공정을 제공한다.