• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.17-23
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• 2005

This paper describes the simulation of a micromachined dome-shaped-diaphragm acoustic transducer built on a $1.5{\mu}m$ thick silicon nitride diaphragm ($2,000{\mu}m$ in radius, with a circular clamped boundary on a silicon substrate) with electrodes and piezoelectric ZnO film in a silicon substrate. Finite element analysis with ANSYS 5.6 has been performed to analyze the static and dynamic behaviors of the transducer under both pressure and voltage loadings.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1014-1018
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• 2005

The purpose of this study is to obtain strong bond strength at the interface between piezoelectric substrates and semiconductor thin films to be applied for the manufacture of high-performance acoustic wave semiconductor coupled device. For this purpose, we have compared and examined the effects of different surface treatment methods on hydrophile properties at the surface of the piezoelectric substrates. Moreover, we have observed the effect of microwave and laser on the elimination of water molecules at the interface. As for the piezoelectric substrates, dry method for surface treatment was found to be superior in the control of hydrophilicity of the surface compared to wet method. On the other hand, both microwave and laser were found to be effective in the elimination of water molecules in the interface.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.692-701
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• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.177-181
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• 2003

This paper presents a 3-axis fine positioning stage. All the procedure concerning the design and fabrication of the stage are described. The stage considered here is composed of flexure hinges, piezoelectric actuators and their peripherals. A special flexure hinge is adopted to be able to actuate the single stage in three axes at the same time. A ball contact mechanism is introduced into the piezoelectric actuator to avoid the cross talk among the axes. The final design is obtained with the theoretical analysis on the stage. An actual fine stage is developed and the design specifications are verified through an experiment.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 Proceedings of the Korea Automatic Control Conference, 11th (KACC); Pohang, Korea; 24-26 Oct. 1996
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• pp.24.2-27
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• 1996

This paper is a study on the fuzzy force control of a miniature gripper driven by piezoelectric bimorph actuator. The system is composed of two flexible cantilevers, a stepping motor, a laser displacement transducer and two semiconductor force sensors attached to the beams. Obtained results show that the present artificial finger system works well as a miniature gripper, which produces approximately 0.06N force in the maximum. Further, the fuzzy position/force control algorithm is applied to the soft-handing gripper for stable grasping of a object. It revealed that the fuzzy rule-based controller be efficient controller for the stable drive of the flexible miniature gripper. It also showed that two semiconductor strain gauges located in the flexible beam play an important roles for force control, position control and vibration suppression control.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.601-604
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• 2010

In this study, the piezoelectric energy harvester was investigated employing the pillar structure with the diameter size of 50~500 um. Usually, the aspect ratio between the height and diameter was related with the piezoelectric performance. High aspect ratio was showed the low electric noise and high piezoelectric properties than low aspect ratio. Therefore, we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the 250 ${\mu}m$. In this presentation, we will report the process and properties of micro pillar structure based on the PMN-PZT (Pb$(Mg_{1/3}Nb_{2/3})O_3$-PbZrTiO$_3$) materials.

• Journal of Electrical Engineering and Technology
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• 제5권4호
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• pp.640-645
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• 2010

This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 nm and the diameter of 30-60 nm on the Ag/Ti/PES substrate at $90^{\circ}C$ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

• 한국정보통신학회논문지
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• 제17권7호
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• pp.1645-1652
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• 2013

본 논문에서는 비파괴검사용 고성능 결함탐상기를 위한 압전변환기를 구현하였다. 여기서는 압전변형상수와 전기기계 결합계수 등과 같은 주요 특성에 대한 설계 목표치를 먼저 정하고 유한요소해석을 이용하여 얻은 데이터를 설계 및 제작에 활용하였다. 시편을 이용한 실험 결과, 제작된 PZT 세라믹은 목표치들을 매우 잘 만족시키는 것으로 확인되었다. 이는 공진 주파수에서 매우 향상된 임피던스 특성과 초음파 발생 특성을 가지는 것으로 나타났다. 또한 새로운 압전변환기가 적용된 초음파 결함탐상기는 기존 탐상기보다 증가된 결함 검출이득을 제공한다. 따라서 새로운 결함탐상기는 초음파를 이용한 비파괴검사의 검사 신뢰성 향상에 크게 기여할 수 있을 것으로 사료된다.

• 한국세라믹학회지
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• 제50권3호
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• 한국재료학회지
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• 제13권12호
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.