• Title/Summary/Keyword: physics exhibits

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Incident-angle-based Selective Tunability of Resonance Frequency in Terahertz Planar Metamolecules

  • Lim, A Young;Lee, Joong Wook
    • Current Optics and Photonics
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    • v.6 no.6
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    • pp.590-597
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    • 2022
  • We carry out numerical simulations of the responses of planar metamaterials composed of metamolecules under obliquely incident terahertz waves. A Fano-like-resonant planar metamaterial, with two types of resonance modes originating from the two meta-atoms constituting the meta-molecules, exhibits high performance in terms of resonance strength, as well as the outstanding ability to manipulate the resonance frequency by varying the incident angle of the terahertz waves. In the structure, the fundamental electric dipole resonance associated with Y-shaped meta-atoms is highly tunable, whereas the inductive-capacitive resonance of C-shaped meta-atoms is relatively omnidirectional. This is attributed to the electric near-field coupling between the two types of meta-atoms. Our work provides novel opportunities for realizing terahertz devices with versatile functions, and for improving the versatility of terahertz sensing and imaging systems.

Size Effects of MoS2 on Hydrogen and Oxygen Evolution Reaction

  • Ghanashyam, Gyawali;Jeong, Hae Kyung
    • Journal of Electrochemical Science and Technology
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    • v.13 no.1
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    • pp.120-127
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    • 2022
  • Molybdenum disulfide (MoS2) has been widely used as a catalyst for the bifunctional activities of hydrogen and oxygen evolution reactions (HER and OER). Here, we investigated size dependent HER and OER performance of MoS2. The smallest size (90 nm) of MoS2 exhibits the lowest overpotential of -0.28 V at -10 mAcm-2 and 1.52 V at 300 mAcm-2 with the smallest Tafel slopes of 151 and 176 mVdec-1 for HER and OER, respectively, compared to bigger sizes (2 ㎛ and 6 ㎛) of MoS2. The better HER and OER performance is attributed to high electrochemical active surface area (6 × 10-4 cm2) with edge sites and low charge transfer resistance (18.1 Ω), confirming that the smaller MoS2 nanosheets have the better catalytic behavior.

Effects of Composition on the Memory Characteristics of (HfO2)x(Al2O3)1-x Based Charge Trap Nonvolatile Memory

  • Tang, Zhenjie;Ma, Dongwei;Jing, Zhang;Jiang, Yunhong;Wang, Guixia;Zhao, Dongqiu;Li, Rong;Yin, Jiang
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.241-244
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    • 2014
  • Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

Fe3O4/CoFe2O4 superlattices; MBE growth and magnetic properties

  • Quang, Van Nguyen;Shin, Yooleemi;Duong, Anh Tuan;Nguyen, Thi Minh Hai;Cho, Sunglae;Meny, Christian
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.242-242
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    • 2016
  • Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

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Recycling of Sintered Nd-Fe-B Magnets Doped with PrNd Nanoparticles

  • Zhang, Xuefeng;Liu, Fei;Liu, Yanli;Ma, Qiang;Li, Yongfeng;Zhao, Qian;Wang, Gaofeng;Li, Zhubai
    • Journal of Magnetics
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    • v.20 no.2
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    • pp.97-102
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    • 2015
  • The waste of sintered Nd-Fe-B magnets was recycled using the method of dopingPrNd nanoparticles. The effect of PrNd nanoparticle doping on the magnetic properties of the regenerated magnets has been studied. As the content of the PrNd nanoparticles increases, the coercivity increases monotonically, whereas both the remanence and the maximum energy products reach the maximum values for 4 wt% PrNd doping. Microstructural observation reveals that the appropriate addition of PrNd nanoparticles improves the magnetic properties and refines the grain. Domain investigation shows that the self-pinning effect of the rare earth (Re)-rich phase is enhanced by PrNd nano-particle doping. Compared to the magnet with 4 wt% PrNd alloy prepared using the dual-alloy method, the regenerated magnet doped with the same number of PrNd nanoparticles exhibits better magnetic properties and a more homogeneous microstructure. Therefore, it is concluded that PrNd nanoparticle doping is an efficient method for recycling the leftover scraps of Nd-Fe-B magnets.

Antiblurry Dejitter Image Stabilization Method of Fuzzy Video for Driving Recorders

  • Xiong, Jing-Ying;Dai, Ming;Zhao, Chun-Lei;Wang, Ruo-Qiu
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.6
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    • pp.3086-3103
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    • 2017
  • Video images captured by vehicle cameras often contain blurry or dithering frames due to inadvertent motion from bumps in the road or by insufficient illumination during the morning or evening, which greatly reduces the perception of objects expression and recognition from the records. Therefore, a real-time electronic stabilization method to correct fuzzy video from driving recorders has been proposed. In the first stage of feature detection, a coarse-to-fine inspection policy and a scale nonlinear diffusion filter are proposed to provide more accurate keypoints. Second, a new antiblurry binary descriptor and a feature point selection strategy for unintentional estimation are proposed, which brought more discriminative power. In addition, a new evaluation criterion for affine region detectors is presented based on the percentage interval of repeatability. The experiments show that the proposed method exhibits improvement in detecting blurry corner points. Moreover, it improves the performance of the algorithm and guarantees high processing speed at the same time.

Fabrication of resistive switching memory by using MoS2 layers grown by chemical vapor deposition

  • Park, Sung Jae;Qiu, Dongri;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.298.1-298.1
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    • 2016
  • Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

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Synthesis and Quality of Cr-doped AIN Thin Films Grown by RF Sputtering

  • Quang, Pham Hong;Hung, Tran Quang;Dai, Ngo Xuan;Thanh, Tran Hoai;Kim, Cheol-Gi
    • Journal of Magnetics
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    • v.12 no.4
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    • pp.149-151
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    • 2007
  • The AlCrN films were grown by RF reactive sputtering method under the selected conditions. The Cr concentration was varied by the number of Cr pieces placed on the Al target. The sample quality has been studied by XRD, Auger spectroscopy, optical absorption and electrical resistant measurements. The XRD and Auger results show that the samples consist of a major phase with the $Al_{1-x}Cr_xN$ formula, which has a hexagonal structure, and a few percents at. of oxygen, which may form $Al_2O_3$. There exist the Cr clusters in the samples with high concentration of Cr. The optical absorption measurement provides the information about the band gap that relates strongly to the quality of samples. The quality of samples is also clearly reflected in electrical measurement, i.e., the temperature dependence of resistance exhibits a semiconductor characteristic only for the samples that have no Cr cluster. In these cases, the values of ionization energies $E_a$ can be derived from R(T) plots by using the function R(T) = Ro exp $(E_a/k_BT)$.

Surface Plasmon Modes Confined in the Gap Between Metal Nanowire and Dielectric Slab (유전체 판과 금속 나노선 사이에 구속된 표면 플라즈몬 모드)

  • Hahn, Chol-Oong;Oh, Cha-Hwan;Song, Seok-Ho
    • Korean Journal of Optics and Photonics
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    • v.22 no.6
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    • pp.269-275
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    • 2011
  • We propose a metal-dielectric hybrid waveguide structure consisting of a single metal nanowire placed on a flat dielectric slab. Mode size and propagation loss of the surface-plasmons confined in the metal-dielectric gap are compared with those of the complementary structure with a dielectric nanowire on a metal surface. In the case of the nanowire's diameter much smaller than the wavelength the two structures reveal quite different characteristics; the dielectric nanowire-on-metal has longer propagation distance, but only the metal nanowire-on-dielectric exhibits a mode size two fold smaller than the diffraction limit. The proposed hybrid structure may therefore be more suitable for realization of nanocavity lasers.

Structural ordering, electronic and magnetic properties of bundled $Mo_6S_9-_xI_x$ nanowires

  • Kang, Seoung-Hun;Tomanek, David;Kwon, Young-Kyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.55-55
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    • 2010
  • We use ab initio density functional theory to determine the effect of bundling on the equilibrium structure, electronic and magnetic properties of $Mo_6S_{9-x}I_x$nanowires with x = 0, 3, 4.5, 6. Each unit cell of these systems contains two $Mo_6S_{6-x}I_x$ clusters connected by S3 linkages to form an ordered linear array. Due to the bi-stability of the sulfur linkages, the total energy of the nanowires exhibits typically many minima as a function of the wire length. We find that nanowires can switch over from metallic to semiconducting by applying axial stress. Structural order is expected in bundles with x=0 and x=6, since there is no disorder in the decoration of the Mo clusters. In bundles with other stoichiometries, we expect structural disorder to occur. We find the optimum inter-wire distance to depend sensitively on the orientation of the wires, but only weakly on x. It is also found that the electronic properties of nanowires are affected strongly due to bundling of nanowires exhibiting very unusual Fermi surfaces. Furthermore, ferromagnetic behaviors are observed in selected stable and many more unstable atomic arrangements in nanowire bundles.

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