Effects of Composition on the Memory Characteristics of (HfO2)x(Al2O3)1-x Based Charge Trap Nonvolatile Memory |
Tang, Zhenjie
(College of Physics and Electronic Engineering, Anyang Normal University)
Ma, Dongwei (College of Physics and Electronic Engineering, Anyang Normal University) Jing, Zhang (College of Physics and Electronic Engineering, Anyang Normal University) Jiang, Yunhong (College of Physics and Electronic Engineering, Anyang Normal University) Wang, Guixia (College of Physics and Electronic Engineering, Anyang Normal University) Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University) Li, Rong (School of Mathematics and Statistics, Anyang Normal University) Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University) |
1 | S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett., 77, 1662 (2000). [DOI: http://dx.doi.org/10.1063/1.1310209]. DOI ScienceOn |
2 | S. J. Wrazien, Y. Zhao, J. D. Krayer, and M. H. White, Solid State Electronics., 47, 885 (2003). [DOI: http://dx.doi.org/10.1016/S0038-1101(02)00448-3]. DOI ScienceOn |
3 | T. H. Kim, J. S. Sim, J. D. Lee, H. C. Shin, and B. G. Park, Appl. Phys. Lett., 85, 4807 (2004). [DOI: http://dx.doi.org/10.1063/1.1822924]. DOI |
4 | X. D. Huang, Johnny K. O. Sin, and P. T. Lai, IEEE Electron Device Lett., 34, 499 (2013). [DOI: http://dx.doi.org/10.1109/LED.2013.2244557]. DOI ScienceOn |
5 | C. H. Zhu, Z. L. Huo, Z. G. Xu, M. H. Zhang, Q. Wang, J. Liu, S. B. Long, and M. Liu, Appl. Phys. Lett., 97, 253503 (2010). [DOI: http://dx.doi.org/10.1063/1.3531559]. DOI |
6 | S. H. Lee, Y. Jung, and R. Agarwal, Nat. Nanotechnol., 2, 626 (2007). [DOI: http://dx.doi.org/10.1038/nnano.2007.291]. DOI ScienceOn |
7 | Front-end processing in International Technology Roadmap for Semiconductors (ITRS) 2012 |
8 | K. H. Lee, H. C. Lin, and T. Y. Huang, Elect. Dev. Lett., 34, 393 (2013). [DOI: http://dx.doi.org/10.1109/LED.2013.2237748 ]. DOI ScienceOn |
9 | G. Zhang, X. P. Wang, W. J. Yoo, and M. F. Li, IEEE Trans Electron Dev., 54, 3317 (2007). [DOI: http://dx.doi.org/10.1109/TED.2007.908888]. DOI ScienceOn |
10 | Y. Zhou, J. Yin, H. N. Xu, Y. D. Xia, Z. G. Liu, A. D. Li, Y. P. Gong, L. Pu, F. Yan, and Y. Shi, Appl. Phys. Lett., 97, 143504 (2010). [DOI: http://dx.doi.org/10.1063/1.3496437]. DOI ScienceOn |
11 | M. Burkhardt, A. Jedaa, M. Novak, A. Ebel, K. Voitchovsky, F. Stellacci and A. Hirsch, Adv. Mater., 22, 2525(2010). [DOI: http://dx.doi.org/10.1063/1.3531559]. DOI ScienceOn |
12 | Z. J. Tang, R. Li, and F. J. Yu, Vacuum, 99, 17 (2014). [DOI: http://dx.doi.org/10.1016/j.vacuum.2013.05.010]. DOI ScienceOn |
13 | Z. J. Tang, D. Q. Zhao, R. Li, and X. H. Zhu, Trans. Electr. Electron. Mater., 15, 16 (2014). [DOI: http://dx.doi.org/10.4313/TEEM.2014.15.1.16]. DOI ScienceOn |
14 | Z. J. Tang, Y. D. Xia, H. N. Xu, J. Yin, Z. G. Liu, A. D. Li, X. J. Liu, Y. Feng, and X. L. Ji, Electrochem Solid State Lett., 14, G13 (2011). [DOI: http://dx.doi.org/10.1149/1.3518706]. DOI |
15 | J. H. Kim and J. B. Choi, IEEE Trans Electron Dev., 51, 2048 (2004). [DOI: http://dx.doi.org/10.1109/TED.2004.838446 ]. DOI ScienceOn |
16 | Z. J. Tang, X. H. Zhu, H. N. Xu, Y. D. Xia, J. Yin, A. D. Li, F. Yan, and Z. G. Liu, Appl. Phys. A, 108, 217 (2012). [DOI: http://dx.doi.org/10.1007/s00339-012-6877-7]. DOI |
17 | J. Robertson, Rep. Prog. Phys., 69, 327 (2006). [DOI: http://dx.doi.org/10.1088/0034-4885/69/2/R02]. DOI ScienceOn |
18 | X. Zhu, Y. Yang, Q. Li, D. E. Ioannou, J. S. Suehle, and C. A. Richter, Microelectron. Eng., 85, 2403 (2008). [DOI: http://dx.doi.org/10.1016/j.mee.2008.09.013]. DOI ScienceOn |