Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Composition on the Memory Characteristics of (HfO2)x(Al2O3)1-x Based Charge Trap Nonvolatile Memory

  • Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Ma, Dongwei (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Jing, Zhang (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Jiang, Yunhong (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Wang, Guixia (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Li, Rong (School of Mathematics and Statistics, Anyang Normal University) ;
  • Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University)
  • Received : 2014.03.05
  • Accepted : 2014.07.02
  • Published : 2014.10.25
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Abstract

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

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