• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.251-258
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• 2009

Building-Integrated Photovoltaics (BIPV) is a photovoltaic (PV) technology which can be incorporated into the roofs walls of both commercial and domestic buildings to provide a source of electricity. BIPV systems can operate as a multi-functional building components, which generates electricity and serves as part of building envelope. It can be regarded as a new architectural elements, adding to the building's aesthetics. Applying PV modules on roof has an advantage over wall applications as they seem to receive more solar radiation on PV modules. There are various types of PV applications on building roofs: attached, on-top and integrated. This paper describes the classification and characteristics of PV applications on roofs.

• Proceedings of the KIEE Conference
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• summer
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• pp.1544-1546
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• 2004

This paper describes the element of solar cell's characteristics, photovoltaic system and solar tracking through experiment. Furthermore, it proposes the experiment results of the PV system is contained solar modules, power conditioning system and the solar tracking system using air compress charging energy The experimental results show that the PV system is always operated at maximum power of solar cells and tracking the sun in order to generate efficiently power generation and propose a capability of its application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.551-554
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• 2015

This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.69-73
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• 2002

A study on photovoltaic system has a lot of problems. Such as repetition experiment in the same condition, development of MPPT(Maximum Power Point Tracking) algorithm, development of islanding detection algorithm and so forth. The reason Is that solar cell output characteristics are varied by insolarion and surface temperature of solar cell. Therefore, the assistance equipment is required which emulates the solar cell characteristics. In this paper, propose the new modeling of solar cell and verify this modeling using MATLAB simulation. And experiment virtual implement of solar cell system using this modeling.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.336-337
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• 2007

The energy conversion characteristics of $TiO_2$ paste of dye-sensitized solar cell (DSSC) was investigated. In the case of DSSC without a binder, the current density increased due to the development of porosity. As for DSSC with a binder, the fill factor increased due to the development of network among the particles. The energy conversion efficiency of 7.2% was obtained due to the porosity and the network as for DSSC with the mixed binder (Vol. 50:50).

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.195-198
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• 2017

This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.130-134
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• 2022

An anti-reflective coating is used to improve the performance of the solar cell. The anti-reflective coating changes the value of the short-circuit current about the thickness. However, the current-voltage characteristics about the anti-reflective coating are difficult to calculate without simulation tool. In this paper, a modeling technique to determine the short-circuit current value and the current-voltage characteristics in accordance with the thickness is proposed. In addition, artificial neural network is used to predict the short-circuit current with the dependence of temperature and thickness. Simulation results incorporating the artificial neural network model are obtained using MATLAB/Simulink and show the current-voltage characteristic according to the thickness of the anti-reflective coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.