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http://dx.doi.org/10.4313/JKEM.2015.28.9.551

The Fabrication of Super Junction IGBT with 3,000 V Class Super Junction Field Rings  

Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.9, 2015 , pp. 551-554 More about this Journal
Abstract
This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.
Keywords
Planar gate; Super high voltage; Super junction; NPT IGBT; Breakdown voltage;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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