• Tunnel and Underground Space
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• v.31 no.6
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• pp.534-548
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• 2021

In this paper, the feasibility of generating solar power near an abandoned quarry is examined with the objectives of resolving the essential problems that quarries encounter, such as rockfalls and space usage issues. On an abandoned quarry site in Sadang, Seoul, Republic of Korea, two different PV installation methods were analyzed. The first is attaching PV directly on the quarry slope. Since there are no corresponding safety standards and precedents for installing solar panels directly on slopes, the power generation potential was calculated by using topographic data and reasonable assumptions. The surface area of cut slope section was extracted from the Digital Elevation Model(DEM) via ArcGIS and Python programming to calculate the tilt and power capacity of installable panels. The other approach is installing PV as a rockfall barrier, and the power generation potential was analyzed with the assumption that the panel is installed in the direction of facing solar irradiation. For the derivation of power generation, the renewable energy generation analysis program SAM(System Advisor Model) was used for both methods. According to the result, quarries that have terminated resource extraction and remain devastated have the potential to be transformed into renewable energy generation sites.

• Resources Recycling
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• v.30 no.2
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• pp.39-45
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• 2021

Spent photovoltaic module is one of the important resource of silver, while related research concerning silver recovery remains limited. In our previous research, HNO3 was utilized to dissolve Ag(I) and Al(III) from the spent silicon solar cells. In order to recover Ag(I) from the leachate of a silicon solar cell, the present study made use of a nitrate solution containing Ag(I) and Al(III), which was subjected to a solvent extraction process with 5,8-diethyl-7-hydroxydodecan-6-oxime (LIX63). Ag(I) was selectively extracted with LIX63 over Al(III) from the nitrate leach solution. Subsequently, quantitative stripping of Ag(I) from the loaded LIX63 was performed by using 20% ammonia water. The McCabe-Thiele plots for the extraction and stripping isotherms of Ag(I) were also constructed. Extraction and stripping simulation tests confirmed an Ag(I) extraction and stripping efficiency of >99.99% and 98.9%, respectively with high purity Ag (99.998%) and Al (99.99%) solution. A process flow sheet for Ag(I) recovery from the nitrate leach solution was proposed.

• Journal of the Korean GEO-environmental Society
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• v.24 no.12
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• pp.5-11
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• 2023

Economic damage is occurring due to landslides and debris flows that occur when the ground artificially created for roads or photovoltaic power generation facilities is weakened by rainfall such as torrential rain. In order to understand the stability of the artificially created ground, it is very important to check the ground information such as the compositional state and mechanical characteristics of the stratum. However, since most of the investigation sites are steep slopes or there are no access roads, it is not easy to enter the drilling equipment commonly used to check ground information and perform standard penetration tests. In this study, a dynamic cone penetration test (DCP) device using a miniaturized auger drilling equipment and an automatic drop device was developed to check the cone resistance value and the dynamic cone penetration test value and analyze the correlation with the standard penetration test value to confirm its applicability at the mountain solar power generation site. As a result, the cone resistance value is q_d = 0.46 N and the dynamic cone penetration test value is N_d = 1.58 N, confirming a value similar to the results of existing researchers to secure its reliability.

• Korean Journal of Agricultural and Forest Meteorology
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• v.25 no.3
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• pp.218-225
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• 2023

An agrivoltaic system (AVS) is a combined system that generates power through photovoltaic panels (PVPs) installed above a field where a crop is cultivated. Although soil moisture is an important limiting factor for open-field crop production, particularly during spring season in Korea, it is not well considered in the utilization of AVS. Indeed, the application of water-energy-food nexus on the AVS should be necessary. In this study, the changes of soil moisture and temperature under the AVS was investigated in fallow paddy field during spring season. The AVS that has partial shading condition by PV panels was decreased soil temperature and increased soil moisture compared to open-field. Furthermore, the maximum of the change in soil moisture to the change in soil temperature had a negative correlation both on open-field and AVS under wet condition. It represents that the micro-climate under the AVS is in energy-limited condition. The open-field of relatively high soil temperature was in water-limited condition. The different behavior of soil moisture on the AVS should be considered for the sustainable agricultural system as related to water-energy-food nexus.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.31-40
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• 2014

The Korean government made the 2nd Energy Basic Plan to achieve 11% of new and renewable energies distribution rate until 2035 as a response to cope with international discussion about greenhouse gas emission reduction. Renewable energies include solar thermal, photovoltaic, bioenergy, wind power, small hydropower, geothermal energy, ocean energy, and waste energy. New energies contain fuel cells, coal gasification and liquefaction, and hydrogen. As public and private investment to enhance the distribution of new and renewable energies, it is necessary to clarify the economic effects of the new and renewable energies sector. To the end, this study attempts to apply an input-output analysis and analyze the economic effects of new and renewable energies sector using 2012 input-output table. Three topics are dealt with. First, production-inducing effect, value-added creation effect, and employment-inducing effect are quantified based on demand-driven model. Second, supply shortage effects are analyzed employing supply-driven model. Lastly, price pervasive effects are investigated applying Leontief price model. The results of this analysis are as follows. First, one won of production or investment in new and renewable energies sector induces 2.1776 won of production and 0.7080 won of value-added. Moreover, the employment-inducing effect of one billion won of production or investment in new and renewable energies sector is estimated to be 9.0337 persons. Second, production shortage cost from one won of supply failure in new and renewable energies sector is calculated to be 1.6314 won, which is not small. Third, the impact of the 10% increase in new and renewable energies rate on the general price level is computed to be 0.0123%, which is small. This information can be utilized in forecasting the economic effects of new and renewable energies sector.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.1-7
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• 2017

Cobalt silicide was used as a counter electrode in order to confirm its reliability in dye-sensitized solar cell (DSSC) devices. 100 nm-Co/300 nm-Si/quartz was formed by an evaporator and cobalt silicide was formed by vacuum heat treatment at $700^{\circ}C$ for 60 min to form approximately 350 nm-CoSi. This process was followed by etching in $80^{\circ}C$-30% $H_2SO_4$ to remove the cobalt residue on the cobalt silicide surface. Also, for the comparison against Pt, we prepared a 100 nm-Pt/glass counter electrode. Cobalt silicide was used for the counter electrode in order to confirm its reliability in DSSC devices and maintained for 0, 168, 336, 504, 672, and 840 hours at $80^{\circ}C$. The photovoltaic properties of the DSSCs employing cobalt silicide were confirmed by using a simulator and potentiostat. Cyclic-voltammetry, field emission scanning electron microscopy, focused ion beam scanning electron microscopy, and energy dispersive spectrometry analyses were used to confirm the catalytic activity, microstructure, and composition, respectively. The energy conversion efficiency (ECE) as a function of time and ECE of the DSSC with Pt and CoSi counter electrodes were maintained for 504 hours. However, after 672 hours, the ECEs decreased to a half of their initial values. The results of the catalytic activity analysis showed that the catalytic activities of the Pt and CoSi counter electrodes decreased to 64% and 57% of their initial values, respectively(after 840 hours). The microstructure analysis showed that the CoSi layer improved the durability in the electrolyte, but because the stress concentrates on the contact surface between the lower quartz substrate and the CoSi layer, cracks are formed locally and flaking occurs. Thus, deterioration occurs due to the residual stress built up during the silicidation of the CoSi counter electrode, so it is necessary to take measures against these residual stresses, in order to ensure the reliability of the electrode.

• Journal of Climate Change Research
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• v.1 no.2
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• pp.163-177
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• 2010

This study analyzes the economies of photovoltaic systems in an apartment complex of 1,185 households, in cases of feed-in tariff and subsidy for solar home program of the government. When including the revenue only from electricity sales, NPVs of subsidy and that of feed-in tariff are -560 million KRW and -87 million KRW respectively. With the avoided social cost included without the revenues from CERs, NPVs of subsidy and feed-in tariff are -556 million KRW and -84 million KRW respectively. With the revenues from CERs, NPV of subsidy is -526 million KRW and NPV of feed-in tariff is -54 million KRW. As results of sensitivity analysis based on the changes in capital costs and discount rates, while all scenarios with subsidy including the revenues from CERs are not commercially viable, all scenarios with feed-in tariff exclusive of the revenues from CERs are commercially viable when discount rate is less than 7.2% or capital cost is less than 6,840 thousand KRW/kW. In the cases that include the avoided social cost, while all scenarios with subsidy including the avoided social cost as well as the revenues from CERs are not commercially viable, all scenarios with feed-in tariff are commercially viable without the revenues from CERs when discount rate is less than 7.2% or capital cost is less than 6,856 thousand KRW/KW. The results indicate that the changes in discount rates do not influence the revenues from CERs, but the revenues from electricity sale. Considering that the number of apartment complex and the positive environmental and social benefits from PV system, government needs to promote its diffusion.