• The Korean Journal of Nuclear Medicine Technology
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• v.15 no.2
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• pp.116-124
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• 2011

Purpose: To establish accurate external quality assurance (EQA) test, cross institutional and modality tests were performed using WHO certificated reference material (CRM) and same pooled patients serum. Materials and Methods: Accuracy and precision were evaluated using CRM and pooled patients' serum for AFP, CEA, PSA, CA 125, CA 19-9, T3, T4, Tg, TSH. To evaluate the accuracy and precision, recover test and coefficient variation were measured. RIA test were performed in major 5 RIA laboratory and EIA (CLIA) test were done in 5 major EIA laboratory. same sample of CRM and pooled serum were delivered to each laboratory. Results: In 2009, mean precision of total tumor marker of RIA was $14.8{\pm}4.2%$ and that of EIA(CLIA) was $19.2{\pm}6.9%$. In 2010, mean precision of 5 tumor marker and T3, T4, Tg, TSH was $13.8{\pm}6.1%$ in RIA and $15.5{\pm}7.7%$ in EIA (CLIA). There was no significant difference between RIA and EIA. In RIA, the coefficient variations (CV) of AFP, CEA, PSA, CA 125, T3, T4, TSH were within 20%. The CV of CA 19-9 was over 20% but there was no significant difference with EIA (CLIA) (p=0.345). In recovery test using CRM, AFP, PSA, T4, TSH showed 92~103% of recovery in RIA. In recovery test using commercial material, CEA, CA 125, CA 19-9 showed relatively lower recovery than CRM but there was no significant difference between RIA and EIA (CLIA). Conclusion: By evaluating the precision and accuracy of each test, EQA test could more accurately measured the quality of each test and performance of laboratory.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.340-346
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• 2002

To understand the characteristics of the passively Q-switched Nd:YAG laser output energy with $Cr^{4+}$:YAG saturable absorbers, the transmissions of $Cr^{4+}$:YAG and the inversion population densities of Nd:YAG at the onset of Q-switch were experimentally analysed. The measured transmissions at the onset of Q-switch were 0.70$\pm$0.02 and 0.62$\pm$0.02 for the 0.48 and 0.38 of initial transmission, respectively. It means that the initial transmission loss of $Cr^{4+}$:YAG absorber is reduced in a low Q-state due to the initial absorbing effect of $Cr^{4+}$:YAG. In pumping stage, $Cr^{4+}$:YAG has absorbing processes due to the fluorescence and amplified spontaneous emissions of the Nd:YAG even if there is no laser oscillation. The minimum population inversion densities for Qswitch were approximately 3.7${\times}{10^{17}}$ and 4.0${\times}{10^{17}}$ $cm^{-3}$, respectively. At the beginning of Q-switch, the number density of $Cr^{4+}$ions in the ground state of $Cr^{4+}$:YAG was approximately 1.4${\times}{10^{17}}$ $cm^{-3}$ and the ratio of the ground to the excited state of absorbing $Cr^{4+}$ions was 0.44 both. The modified theoretical output energies with the initial absorbing effect were 18 and 18.5 mJ. The measured output energies were 17$\pm$1 and 18$\pm$1.5 mJ, respectively. The quantum extraction efficiencies of Q-switch were 0.32 both. The theoretical Q-switched output results with the initial absorbing effect of the saturable absorber are a good agreement with the experimental results.

• Nuclear Medicine and Molecular Imaging
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• v.42 no.6
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• pp.469-477
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• 2008

Purpose: The goal of this paper is to present the design and performance of a position encoding circuit for $16{\times}16$ array of position sensitive multi-anode photomultiplier tube for small animal PET scanners. This circuit which reduces the number of readout channels from 256 to 4 channels is based on a charge division method utilizing a resistor array. Materials and Methods: The position encoding circuit was simulated with PSpice before fabrication. The position encoding circuit reads out the signals from H9500 flat panel PMTs (Hamamatsu Photonics K.K., Japan) on which $1.5{\times}1.5{\times}7.0\;mm^3$ $L_{0.9}GSO$ ($Lu_{1.8}Gd_{0.2}SiO_{5}:Ce$) crystals were mounted. For coincidence detection, two different PET modules were used. One PET module consisted of a $29{\times}29\;L_{0.9}GSO$ crystal layer, and the other PET module two $28{\times}28$ and $29{\times}29\;L_{0.9}GSO$ crystal layers which have relative offsets by half a crystal pitch in x- and y-directions. The crystal mapping algorithm was also developed to identify crystals. Results: Each crystal was clearly visible in flood images. The crystal identification capability was enhanced further by changing the values of resistors near the edge of the resistor array. Energy resolutions of individual crystal were about 11.6%(SD 1.6). The flood images were segmented well with the proposed crystal mapping algorithm. Conclusion: The position encoding circuit resulted in a clear separation of crystals and sufficient energy resolutions with H9500 flat-panel PMT and $L_{0.9}GSO$ crystals. This circuit is good enough for use in small animal PET scanners.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.197-203
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• 2002

The TiO$_2$ coating solutions were synthesized with different concentrations (T1-0.7N, T2-2.0N) of hydrochloric acid used as catalyst. and TiO$_2$ thin films were prepared by sol-gel dip coating. Their structural and optical properties were examined as a function of calcination temperature. XRD results showed that T1 thin films calcined at 400~80$0^{\circ}C$ had the anatase phase, while those calcined at 100$0^{\circ}C$ had the rutile phase. T2 thin films calcined at 40$0^{\circ}C$ and $600^{\circ}C$ had the anatase phase, with the rutile phase for calcination at 80$0^{\circ}C$. Crystallinity of T2 thin films was superior to that of T1 thin films. The crystallite size of TiO$_2$ thin films increased with increasing calcination temperature, and the crystallite size of anatase phase in T2 thin films was larger than that in T1 thin films, but the crystallite size of rutile phase in T2 thin films was smaller. The surface morphology of the films showed that the films were formed more densely in the rutile phase than in the anatase phase, this phenomenon appeared conspicuously in T2 thin films. The transmittance of the samples with thin films on quartz glass calcined at 100$0^{\circ}C$ was significantly reduced at wavelength range about 300-700 nm due to the increased absorption originating from the change of crystallite phase and composition of the films and the scattering effect originating from increasing crystallite size. The refractive index of TiO$_2$ thin films increased, and hence the film thickness as well as the porosity of TiO$_2$ thin films decreased with increasing calcination temperature. Furthermore, the refractive index of T2 thin films was higher than T1 thin films, and porosity of T2 films was lower.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.273-281
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.182-190
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• 2005

The fiber Raman amplifier(FRA) is a distinctly advantageous technology. Due to its wider, flexible gain bandwidth, and intrinsically lower noise characteristics, FRA has become an indispensable technology of today. Various FRA modeling methods, with different levels of convergence speed and accuracy, have been proposed in order to gain valuable insights for the FRA dynamics and optimum design before real implementation. Still, all these approaches share the common platform of coupled ordinary differential equations(ODE) for the Raman equation set that must be solved along the long length of fiber propagation axis. The ODE platform has classically set the bar for achievable convergence speed, resulting exhaustive calculation efforts. In this work, we propose an alternative, highly efficient framework for FRA analysis. In treating the Raman gain as the perturbation factor in an adiabatic process, we achieved implementation of the algorithm by deriving a recursive relation for the integrals of power inside fiber with the effective length and by constructing a matrix formalism for the solution of the given FRA problem. Finally, by adiabatically turning on the Raman process in the fiber as increasing the order of iterations, the FRA solution can be obtained along the iteration axis for the whole length of fiber rather than along the fiber propagation axis, enabling faster convergence speed, at the equivalent accuracy achievable with the methods based on coupled ODEs. Performance comparison in all co-, counter-, bi-directionally pumped multi-channel FRA shows more than 102 times faster with the convergence speed of the Average power method at the same level of accuracy(relative deviation < 0.03dB).

• Korean Journal of Optics and Photonics
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• v.27 no.1
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• pp.18-24
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• 2016

To effectively utilize a flash and predict its effects on an infrared device, it is essential to know the infrared characteristics of the flash source. In this paper, a study of the IR characteristics of flash light sources is carried out. The IR characteristics of three flash sources, of which two are combustive and the other is explosive, are measured with an IR characteristic measurement system over the middle- and long-wavelength infrared ranges. From the measurements, the radiances over the two IR ranges and the radiative temperatures of the flashes are extracted. The IR radiance of flash A is found to be the strongest among the three, followed by those of sources C and B. It is also shown that the IR radiance of flash A is about 10 times stronger than that of flash B, even though these two sources are the same type of flash with the same powder. This means that the IR radiance intensity of a combustive flash source depends only on the amount of powder, not on the characteristics of the powder. From the measured radiance over MWIR and LWIR ranges for each flashes, the radiative temperatures of the flashes are extracted by fitting the measured data to blackbody radiance. The best-fit radiative temperatures (equivalent to black-body temperatures) of the three flash sources A, B, and C are 3300, 1120, and 1640 K respectively. From the radiance measurements and radiative temperatures of the three flash sources, it is shown that a combustive source radiates more IR energy than an explosive one; this mean, in turn, that the effects of a combustive flash on an IR device are more profound than those of an explosive flash source. The measured IR radiances and radiative temperatures of the flash sources in this study can be used to estimate the effects of flashes on various IR devices, and play a critical role for the modeling and simulation of the effects of a flash source on various IR devices.

• Korean Journal of Optics and Photonics
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• v.27 no.1
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• pp.1-17
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• 2016

Over the past two decades, fiber-based lasers have made remarkable progress, now having reached power levels exceeding kilowatts and drawing a huge amount of attention from academy and industry as a replacement technology for bulk lasers. In this paper we review the significant factors that have led to the progress of fiber lasers, such as gain-fiber regimes based on ytterbium-doped silica, optical pumping schemes through the combination of laser diodes and double-clad fiber geometries, and tandem schemes for minimizing quantum defects. Furthermore, we discuss various power-limitation issues that are expected to incur with respect to the ultimate power scaling of fiber lasers, such as efficiency degradation, thermal hazard, and system-instability growth in fiber lasers, and various relevant methods to alleviate the aforementioned issues. This discussion includes fiber nonlinear effects, fiber damage, and modal-instability issues, which become more significant as the power level is scaled up. In addition, we also review beam-combining techniques, which are currently receiving a lot of attention as an alternative solution to the power-scaling limitation of high-power fiber lasers. In particular, we focus more on the discussion of the schematics of a spectral beam-combining system and their individual requirements. Finally, we discuss prospects for the future development of fiber laser technologies, for them to leap forward from where they are now, and to continue to advance in terms of their power scalability.