Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Properties of Photoluminescence and Growth of CdIn2Te4 Single Crystal by Bridgeman method

Bridgeman법에 의한 CdIn2Te4 단결정 성장과 광발광 특성

  • 문종대 (동신대학교 광전자공학과)
  • Published : 2003.11.30
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Abstract

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

수평 전기로에서 $CdIn_2Te_4$ 다결정을 합성하여 Bridgeman 법으로 3단 수직 전기로에서 $CdIn_2Te_4$ 단결정을 성장하였다. 성장된 결정의 특성은 x선 회절과 광발광 측정으로 조사하였다. $CdIn_2Te_4$ 단결정 시료는 Laue에 배면 반사법에 의해서 (001)면으로 성장되었음을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $8.61{\times}10^{16}/cm^3$, $242\;cm^2/V{\codt}s$였다. $CdIn_2Te_4$ 단결정의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni공식에 따라 계산한 결과 1.4750eV - $(7.69{\times}10^{-3}\;eV/K)T^2$/(T+2147 K)임을 확인하였다. 막 성장된(as-grown) $CdIn_2Te_4$ 단결정 시료를 Cd-, In-, Te 분위기에서 열처리하여 10K에서 Photoluminescence(PL) spectra를 측정하여 점 결함의 기원을 알아보았다. $CdIn_2Te_4$ 단결정내에서 내재된 결함들의 기원을 10 K에서 광발광을 측정하여 연구되었다. PL 측정으로 부터 얻어진 $V_{Te}$, $Cd_{int}$, $V_{Cd}$, 그리고 $Te_{int}$는 주개와 받개로 분류되어졌다. $CdIn_2Te_4$ 단결정 시료를 Cd 분위기에서 열처리하면 n형으로 변환됨을 악 수 있었고, In 분위기에서 열처리하면 열처리 이전의 PL spectra를 보이고 있어서 $I_2$, $I_1$ 및 S.A emission에 의한 PL peak에는 영향을 주지 않는다고 보았다.

Keywords

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