• 한국진공학회지
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• 제21권5호
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• pp.242-248
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• 2012

방사광 가속기에서 얻은 x-선을 이용하여 초고진공에서 열처리를 통하여 얻어진 $TiO_2$ (001) 단결정 표면의 원자가 전자대에 대한 광전자 분광연구를 수행하였다. 이 연구를 통하여 특히 페르미 준위 0.9 eV 근처에 있는 결함에 기인한 전자 상태의 변화로 부터 $Ti^{3+}$ 결함의 산화 또는 열확산 과정에 대한 반응 속도론적 특성을 연구하였다. 본 연구의 결과는 (001)면에서의 $Ti^{3+}$ 결함의 열역학적 특성이 $TiO_2$ (110) 단결정면에서의 그것과 어떻게 다른지를 규명하는데 큰 의미가 있다. 연구 결과, (001)과 (110) 결정면에서의 $Ti^{3+}$ 결함의 거동은 산화 반응성과 결정 내에서의 열적 확산 특성에서 매우 유사하다는 것을 알게 되었다. 이와 같은 결과를 얻게 된 주된 이유 중의 하나는 관여하는 $Ti^{3+}$ 결함이 주로 표면 근처에 분포되어 있다는데서 찾을 수 있다.

• 한국진공학회지
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• 제5권1호
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• pp.14-24
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• 1996

We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the $\Gamma-M,\Gamma-K,\Gamma-M$TEX> symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the $\kappa$-points in the Brillouin zone. In additin, the experimental band widths are narrower than the theoretical band widths by about 0.5eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• 한국재료학회지
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• 제13권9호
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• pp.567-571
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• 2003

We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$ Ω$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$ Ω$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.9-12
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• 2019

We performed Raman spectroscopy on two different over-doped Bi₂Sr₂CaCu₂O_8+x (BSCCO), of which superconducting transition temperatures are 89 K and 77 K. Line-shape analysis of the Raman-spectrum was done, focused on B_1g bond buckling mode which have drawn a lot of attention, since photoemission studies showed an evidence for strong coupling between the mode and electron. The line-shapes show asymmetry and are well fitted by the Fano line-shape formula. Remarkably, we found that the peak line-widths from B_1g bond buckling mode in BSCCO show much broader than those in YBa₂Cu₃O_7-x. The broad line width can be attributed to the superstructure modulation of BSCCO. Our results imply that B_1g bond buckling mode may have close relation to the origin of superconductivity or to boosting the superconducting transition temperature in BSCCO.

• Corrosion Science and Technology
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• 제6권4호
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.212-212
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• 2012

The Coverage dependent attachment of multifunctional groups included in threonine molecules adsorbed to Ge (100)$-2{\times}1$ surface was investigated using core-level photoemission spectroscopy (CLPES) and density functional theory (DFT) calculations. The core-level spectra at a low coverage indicated that the both carboxyl and amine groups participated in the bonding with the Ge (100) surface by "O-H dissociated and N-dative bonded structure". However, at high coverage level, additional adsorption geometry of "O-H dissociation bonded structure" appeared possibly to minimize the steric hindrance between adsorbed molecules. Moreover, the C 1s, N 1s, and O 1s core level spectra confirmed that the carboxyl oxygen is more competitive against the hydroxymethyl oxygen in the adsorption reaction. The adsorption energies calculated using DFT methods suggested that four of six adsorption structures were plausible. These structures were the "O-H dissociated-N dative bonded structure", the "O-H dissociation bonded structure", the "Om-H dissociated-N dative bonded structure", and the "Om-H dissociation bonded structure" (where Om indicates the hydroxymethyl oxygen). These structures are equally likely, according to the adsorption energies alone. Conclusively, we investigate in threonine on Ge (100) surface system that the "O-H dissociated-N dative bonded structure" and the "O-H dissociation bonded structure" are preferred at low coverage and high coverage.

• Carbon letters
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• 제24권
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• pp.73-81
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• 2017

Interconnected meso/microporous activated carbons were prepared from pumpkin seeds using a simple chemical activation method. The porous carbon materials were prepared at different temperatures (PS-600, PS-700, PS-800, and PS-900) and demonstrated huge surface areas ($645-2029m^2g^{-1}$) with excellent pore volumes ($0.27-1.30cm^3g^{-1}$). The well-condensed graphitic structure of the prepared activated carbon materials was confirmed by Raman and X-ray diffraction analyses. The presence of heteroatoms (O and N) in the carbon materials was confirmed by X-ray photoemission spectroscopy. High resolution transmission electron microscopic images and selected area diffraction patters further revealed the porous structure and amorphous nature of the prepared electrode materials. The resultant porous carbons (PS-600, PS-700, PS-800, and PS-900) were utilized as electrode material for supercapacitors. To our delight, the PS-900 demonstrated a maximum specific capacitance (Cs) of $303F\;g^{-1}$ in 1.0 M $H_2SO_4 $ at a scan rate of 5 mV. The electrochemical impedance spectra confirmed the poor electrical resistance of the electrode materials. Moreover, the stability of the PS-900 was found to be excellent (no significant change in the Cs even after 6000 cycles).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.115-115
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• 2015

Many efforts have been devoted on chemical modification of graphene layer to modulate its electrical properties. In the previous report, laser irradiation on the CYTOP (Amorphous Fluoropolymer) covered graphene layer induces chemical modification wherein carbon fluoride is formed on the graphene surface. This results in the insulating I-V characteristics, which have been attracting much research interests on it. However, the direct analytical evidence of the fluoride formation on graphene surface is not yet studied. In this work we investigated what happened on the CYTOP/graphene interface during photon irradiation using spatially resolved photoemission spectroscopy method. It is found that the soft x-ray (614 eV) induces desorption of fluoride atoms from the CYTOP and change di-fluoride form to mono-fluoride. As the photo-induced fluorine desorption is continue strong dipole field generated by initial di-fluoride forms is gradually decreased, resulting in the overall binding energy shift of the C 1s core levels. Both photo-modified CYTOP and CYTOP starts to desorb above $286^{\circ}C$ (~ 0.047 eV), which means that no strong chemical interaction between CYTOP and graphene is established.

• 한국재료학회지
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• 제19권11호
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• pp.625-630
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• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.