• 대한화학회지
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• 제37권2호
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• pp.213-219
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• 1993

들뜬 rhodamine B로부터 박막반도체 $SnO_2$의 전도띠로 주입되는 광전류를 여러 가지의 초감응체가 존재하는 용액에서 시간에 따라 조사하였다. ascorbic acid를 초감응체로 쓰면 그것의 농도, 용액의 pH, 그리고 $SnO_2$에 걸어주는 전위 등이 증가함에 따라 광전류가 대체로 증가하였으나, 전위가 노팡짐에 따라 암전류도 증가하였다. 반면에 KI를 초감응제로 사용하면 낮지만 비교적 안정한 전류를 보여주었다. 용매효과를 포함하여 이들 광감응전류를 증가시키는 원인을 규명해 보았다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.198-201
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• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.25-28
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• 2004

Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.81-83
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• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shellswere etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• 대한화학회지
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• 제36권1호
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• pp.75-80
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• 1992

Thiourea, 1-allyl-2-thiourea, NaI 또는 NaSCN 등의 초감응제 존재하에 광전기화학셀, $ITO/SnO_2/eosin$ B, $NaClO_4/Pt$ 을 이용하여 들뜬 eosin B로부터 박막 전도체 $SnO_2$의 전도띠로 주입되는 광전류의 크기를 장시간에 걸쳐 조사하였다. Thiourea 또는 allylthiourea를 첨가하면, 큰 초기 광전류를 나타내지만 시간에 따라 감소한 반면, 흡광도는 오히려 증가하다가 일정시간 후에는 계속 감소하는 특성을 나타내었다. 이를 분광학적으로 조사한 결과 빛을 받아서 흡광도가 더 큰 물질로 변화하므로 흡광도는 증가하나 형광 양자수율이 보다 더 크게 증가하기 때문에 광전류는 감소하는 것으로 밝혀졌다.

• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.875-880
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• 2018

This paper proposes a novel combined compensation structure in the infrared receiver chip. For the infrared communication chip, the current-voltage (I-V) convert circuit is crucial and important. The circuit is composed by the transimpedance amplifier (TIA) and the combined compensation structures. The TIA converts the incited photons into photocurrent. In order to amplify the photocurrent and avoid the saturation, the TIA uses the combined compensation circuit. This novel compensation structure has the low frequency compensation and high frequency compensation circuit. The low frequency compensation circuit rejects the low frequency photocurrent in the ambient light preventing the saturation. The high frequency compensation circuit raises the high frequency input impedance preserving the sensitivity to the signal of interest. This circuit was implemented in a $0.6{\mu}m$ BiCMOS process. Simulation of the proposed circuit is carried out in the Cadence software, with the 3V power supply, it achieves a low frequency photocurrent rejection and the gain keeps 109dB ranging from 10nA to $300{\mu}A$. The test result fits the simulation and all the results exploit the validity of the circuit.

• 한국수소및신에너지학회논문집
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• 제27권5호
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• pp.540-546
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• 2016

Besides high-efficient photovoltaics based on silicon, polymers, dye-sensitization and hybrid perovskite materials, biomimetic solar cells inspired by a leaf in nature has also been actively studied. As one example, a hydrogel based photovoltaics (HGPV) is a low-cost, environmentally friendly device and requires easy fabrication process. In this paper, the effect of hydroquinone additive on the performance of the HGPV is discussed. The photocurrent increases ~14 times upon the addition of hydroquinone into the agarose hydrogel medium. The photocurrent increase is maximum at the optimum dye concentration, while the photovoltage is barely affected by the dye concentration. The effect of the agarose content in the hydrogel and the types of dyes on the photocurrent is also investigated. Finally, it is shown that the photovoltaic performance of HGPV with hydroquinone can be drastically improved when $TiO_2$ film is deposited on the anode electrode.

• Bulletin of the Korean Chemical Society
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• 제22권7호
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• pp.709-715
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• 2001

We have been studied photosensitization mechanism's additive effect, of perylene 3,4,9,10-tetracarboxyl-diimide and X-phthalocyanine (charge generation materials), using the photochemical and photoelectrochemical approach. It was found that the photoreceptor on the excited state reacts with metal oxide, which creates the charge transfer on the interface of SnO2/electrolyte. In the electrode (X5P1) made of five X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, the cathodic photocurrent of X-phthalocyanine in the 400-600 nm region was increased by the addition of perylene 3,4,9,10-tetracarboxyldiimide. The maximum wavelength of fluorescence of perylene 3,4,9,10-tetracarboxyldiimide showed no dependence on the temperature. The addition of 4-dibenzylamino-2-methylbenzaldehyde diphenylhydrazone known as charge transport material was represented as decreasing photocurrent for X-phthalocyanine and perylene 3,4,9,10-tetracarboxyldiimide, respectively. In the electrode (X1P1) made of single X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, an anodic photocurrent of about 10.5 nA was generated by addition of hydroquinone at 550 nm. And the characteristic of photoinduced discharge was shown to decrease by a factor of 5 and the speed of dark decay was increased by a factor of 1.2.

• Current Photovoltaic Research
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• 제11권3호
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• pp.96-102
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• 2023

Sn-Pb narrow-bandgap perovskite solar cells, which is a light-harvesting layer thicker than 1.3 micrometers, is needed to enhance the low photocurrent. The fabrication of such a thick film through solution processing is a key challenge. Here, we studied and characterized the film by using a precursor solution of increased concentration, comparing it with the universally used 1-micrometer Sn-Pb perovskite film. The increase in molar concentration clearly induced thickness enhancement, but we observed that it also created numerous voids at the interface with bottom charge transporting layer. We hypothesized that these voids might hinder the increase in photocurrent associated with thickness enhancement. By introducing methylammonium chloride (MACl), we successfully fabricated Sn-Pb perovskite film with a thickness of 1.3 micrometer and no voids. Void-controlled Sn-Pb perovskite solar cells not only demonstrated superior short-circuit current density compared to those with voids but also operated smoothly under light exposure.