Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.11a
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- Pages.25-28
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- 2004
Photocurrent characteristics of close-packed HgTe nanoparticles in the infrared-wavelength range
적외선 영역에서의 HgTe 나노입자 광전류 특성
- Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
- Park, Byung-Jun (Department of Electrical Engineering, Korea University) ;
- Kim, Jin-Hyoung (Department of Electrical Engineering, Korea University) ;
- Lee, Jun-Woo (Department of Electrical Engineering, Korea University) ;
- Kim, Dong-Won (Department of Electrical Engineering, Korea University) ;
- Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
- Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
- 김현석 (고려대학교 전기공학과) ;
- 박병준 (고려대학교 전기공학과) ;
- 김진형 (고려대학교 전기공학과) ;
- 이준우 (고려대학교 전기공학과) ;
- 김동원 (고려대학교 전기공학과) ;
- 조경아 (고려대학교 전기공학과) ;
- 김상식 (고려대학교 전기공학과)
- Published : 2004.11.11
Abstract
Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.